Body contact device structure and manufacturing method therefor

Abstract

The invention relates to a body contact device structure and a manufacturing method therefor; the manufacturing method is as follows: after a false grid stack is formed, one end of the false grid stack is removed so as to form an opening; the non-removal part of the false grid stack is a body extraction stack; a body extraction layer of the body extraction stack is directly contacted with a substrate; then a replaced grid stack is formed in the opening; finally, a body contact is formed on the body extraction layer of the body extraction stack. The body contact device structure formed by the method of the invention effectively reduces parasitic effect and device area, and the performances of the device structure are improved.

Description

technical field [0001] The present invention generally relates to a semiconductor device and a manufacturing method thereof, in particular to a body contact device structure based on a gate replacement process and a manufacturing method thereof. Background technique [0002] For MOSFET devices, the influence of body contact on its electrical characteristics is a very important feature. First of all, it can reduce the uncertainty of conversion speed caused by the floating body effect, and secondly, it can be easily connected to the body of the circuit design such as a mixer (Mixer) and a voltage-controlled oscillator (VCO, Voltage Controlled Oscillator) from the outside. . Currently, the body contact structures commonly used in silicon-on-insulator (SOI) technology are mainly T-type gate and H-type gate structures, but both structures require the formation of the body contact region (701) of the active region and the body contact ( 702), and a spacer (703) is needed to isol...

AI Technical Summary

Problems solved by technology

Currently, the commonly used body contact structures in silicon-on-insulator (SOI) technology are mainly T-type gate and H-type gate structures, but both structures need to form the body contact region (701) of the active region and the body contact ( 702), and a spacer (703) is needed to isolate the body contact region (701) and the source and drain region (704), such as Figure 7 The T-shaped gate structure shown is taken as an example. Such a structure increases the area of ​​the device and causes redundant parasitic effects, such as parasitic gate-body capacitance (parasitic gate-body capacitor), parasitic body contact resistance (parasitic body resistor), etc. like Figure 8 As shown, the parasitic grid capacitance (720) refers to the parasitic capacitance between the barrier (703) and the intrinsic body (700), and the parasitic body contact resistance (730) refers to the distance between the body contact (702) and the intrinsic body (700). These parasitic effects reduce the performance of the device. In addition, due to the existence of these parasitic effects, the intrinsic electrical testing of SOI short-channel devices becomes difficult.

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