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Method for preparing copper disulfide thin film with preferred orientation

A copper sulfide and thin film technology, which is applied in the field of preparation of selective orientation copper sulfide thin films, can solve the problems of high preparation cost and complicated process route, achieve low production cost, low requirements for equipment and equipment, and realize large-scale production. The effect of industrial production

Inactive Publication Date: 2011-08-17
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low raw material cost of copper sulfide film, it is a very promising photoelectric thin film material, but the existing process route is complicated and the preparation cost is high, so it is also necessary to explore a low-cost preparation process

Method used

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  • Method for preparing copper disulfide thin film with preferred orientation
  • Method for preparing copper disulfide thin film with preferred orientation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0034] b. 5.316 parts of CuCl 2 2H 2 Put O into a glass bottle, add 75.614 parts of ethanolamine, 113.421 parts of deionized water, add ammonia water until the pH is 8.0, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.

[0035] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds and at 3000 rpm for 15 seconds, so that the dripped solution is coated After uniformity, the substrate was dried at 100°C, and then the above-mentioned solution was dripped and spin-coated again, and then dried again. This was repeated 10 times, and a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0036] d. Put the precursor film sample obtained by the above process into an airtight contain...

Embodiment 2

[0039] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0040] b. 5.316 parts of CuCl 2 2H 2 O put into a mixed solution of 113.421 parts of ethylene glycol and 75.614 parts of ammonia water, add hydrochloric acid until the pH is 3.5, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.

[0041] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds and at 3000 rpm for 15 seconds, so that the dripped solution is coated After uniformity, the substrate was dried at 100°C, and then the above-mentioned solution was dripped and spin-coated again, and then dried again. This was repeated 10 times, and a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0042] d. Put the precursor film sample obtained by the above process into an airtight...

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Abstract

The invention relates to a method for preparing a copper disulfide thin film with preferred orientation and belongs to the technical field of preparation of a semiconductor thin film. The copper disulfide thin film with the preferred orientation is prepared by the following steps of: firstly cleaning a glass substrate; then placing CuCl2 2H2O into a solvent and regulating a pH value; obtaining a precursor thin film on the glass substrate by a spin coating method; drying the precursor thin film; placing the dried precursor thin film into a sealable container with powdered sulfur and hydrazine hydrate so that a precursor thin film sample is not contacted with hydrazine and the powdered sulfur; and finally drying to obtain the copper disulfide thin film with the preferred orientation. The method is carried out without the conditions of the high temperature and high vacuum, has low requirements on instrument equipment, has low production cost and high production efficiency and is easy to operate. The obtained copper disulfide thin film with the preferred orientation has high continuity and uniformity. The invention provides the production method for preparing the copper disulfide thin film with the preferred orientation, which has low cost and capability of realizing industrialization.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thin film preparation, and in particular relates to a method for preparing a selectively oriented copper disulfide thin film. Background technique [0002] With the development of society and economy, my country's total energy consumption has increased sharply, and energy shortages and pollution caused by energy consumption have become prominent problems in domestic social development. Harmonious society is of great significance. In order to make full use of solar energy, which is a clean, safe and environmentally friendly renewable resource, the research and development of photovoltaic materials for solar cells has been paid more and more attention in recent years. [0003] Transition metal sulfides are widely used due to their good photoelectric properties, and copper sulfide is an important transition metal sulfide. The compounds composed of Cu and S have some special optoelectronic prop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
Inventor 刘科高纪念静逄波孙齐磊
Owner SHANDONG JIANZHU UNIV