Stripping liquid composition of photoresist

A photoresist and stripping solution technology, applied in the direction of photosensitive material processing, etc., can solve the problems of inability to remove the photoresist film cleanly, the corrosion of the substrate is aggravated, etc., to achieve excellent stripping effect, low water requirements, The effect of cost minimization

Inactive Publication Date: 2011-08-24
西安东旺精细化学有限公司
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Problems solved by technology

[0003] The invention provides a photoresist stripping solution composition, which is especially suitable for stripping a photoresist film with a thickness of more than 100 μm on a packaging substrate, so as t

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  • Stripping liquid composition of photoresist
  • Stripping liquid composition of photoresist

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[0035] The photoresist stripper composition of the present invention is a composition containing an inorganic base, an organic base, a water-soluble organic solvent, an anticorrosive agent, and water.

[0036] The inorganic base in the present invention includes one or two of sodium hydroxide, potassium hydroxide, and lithium hydroxide. The content of the inorganic base is 0.1wt%-35wt%., preferably 0.5-20wt%, more preferably 1-10wt%. When the concentration is less than 0.1wt%, it will not have the effect of synergistically attacking the photoresist film; At 35wt%, the corrosion of the substrate will increase.

[0037] The organic base described in the present invention includes at least one of alkanolamine and quaternary amine base. As a specific example of alkanolamine, it can be selected from monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminomethoxy)ethanol, 2-(2-ethoxy)ethanol, N-methylethanolamine, N , N-dimethylethanolamine, N-ethylethanolamine, N,N-diethylethanol...

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Abstract

The invention provides a stripping liquid composition of a photoresist, comprising inorganic alkali, organic alkali, water-soluble organic solvent, anti-corrosion agent and water. The mass proportion rate between the inorganic alkali and the organic alkali is 1: 30 to 30: 1. The stripping liquid of the invention is specifically suitable for stripping a dry film of which the thickness is more than 100 mum; and the thick dry film is totally stripped under the low temperature (45-55 DEG C) and the short time (less than 30 min).

Description

technical field [0001] The invention relates to a photoresist stripping liquid composition, which is particularly suitable for stripping a photoresist film with a thickness of more than 100 μm on a packaging substrate, and also suitable for stripping a PCB photoresist film. Background technique [0002] The packaging substrate can provide electrical connection, protection, support, heat dissipation, assembly and other functions for the chip to achieve multi-pin, reduce the volume of packaged products, improve electrical performance and heat dissipation, ultra-high density or multi-chip modularization. The thickness of the photoresist film (100u, 120μm) used in the packaging substrate manufacturing process is much higher than the thickness of the photoresist film (30μm, 40μm) commonly used in PCB, FPC, TFT, and LCD. For the stripping of the thin dry film, Chinese patent CN1428659A proposes a composition of quaternary ammonium hydroxide, water-soluble amine, and water-soluble ...

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Application Information

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IPC IPC(8): G03F7/42
Inventor 张军常积东李承孝
Owner 西安东旺精细化学有限公司
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