Method for manufacturing three-axis thermal convection acceleration sensor chip
A technology of an acceleration sensor and a manufacturing method, which is applied in directions such as multi-dimensional acceleration measurement, acceleration measurement using inertial force, and manufacturing of microstructure devices, which can solve the problems of complex manufacturing process and high cost, and achieve high detection accuracy, good reliability, and realization The effect of cost reduction
Inactive Publication Date: 2012-11-07
JIANGSU UNIV
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Problems solved by technology
The accelerometer with this structure obtains the acceleration test value in the Z-axis direction based on detailed simulation calculations, integrates complex control circuits, and has complex manufacturing processes and high costs.
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[0023] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0024] see figure 1 a-1i, the steps to make a three-axis thermal convection acceleration sensor chip are as follows:
[0025] Step 1, forming the first silicon nitride layer 2 supporting layer
[0026] Such as figure 1 As shown in a, after the double-polished substrate single crystal silicon wafer 1 is strictly cleaned, an oxide layer is formed on the surface of the substrate single crystal silicon wafer 1 by high-temperature dry thermal oxidation, and the oxide layer is a high-temperature silicon oxide layer 4 . The substrate single crystal silicon wafer 1 has a thickness of 420 μm and a resistivity of 3˜8 Ω·cm. The thickness of the high temperature silicon oxide layer 4 may be 0.30-0.40 μm, preferably 0.35 μm. The temperature of high temperature dry thermal oxidation can be 900-1100°C, preferably 1000°C.
[0027] Such as figure 1 As sho...
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Abstract
The invention discloses a method for manufacturing a three-axis thermal convection acceleration sensor chip of consumer electronics. The method comprises the following steps of: forming a high-temperature silicon oxide layer on the surface of a monocrystalline silicon piece substrate, forming a first silicon nitride layer on the high-temperature silicon oxide layer, and forming a polycrystalline temperature sensitive resistor and a polycrystalline heating resistor; reserving contact holes and forming metal interconnect lines; and finally preparing a composite cantilever arm structure, formingreentrant cavities, and performing bonding to form the three-axis thermal convection acceleration sensor chip. In the method, a cantilever arm with a thermopile is downwards bent by utilizing different stress in a composite thin film in a surface micro electro-mechanical machining compatible with a complementary metal oxide semiconductor (CMOS) process to test the acceleration of an axis Z. The manufactured three-axis thermal convection acceleration sensor chip has the advantages of high detection accuracy, high reliability, high stability and the like, and is favorable for realizing chip miniaturization and low cost.
Description
technical field [0001] The invention relates to a manufacturing method of a three-axis thermal convection acceleration sensor chip used for consumer electronic products and capable of detecting the acceleration of the Z axis (up and down directions), and belongs to the technical field of silicon micromechanical sensors. Background technique [0002] At present, Micro Electro-Mechanical System (MEMS, Micro Electro-Mechanical System) has been widely used in the semiconductor industry, especially in consumer electronics products, such as iPod, iPhone, Sony PS3, and Wii and other games and entertainment consumer electronics products, these Acceleration sensors are used in the products as motion control and receiving devices. In Wii and PS3, the acceleration sensor can sensitively sense the player's actions, and convert them into the actions and states of virtual characters, items or vehicles in the game, etc., and display them on the screen. Accelerometers in iPods and iPhones ...
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IPC IPC(8): G01P15/18B81C1/00G01P15/08
Inventor 王权胡然张进李昕欣杨平陈林
Owner JIANGSU UNIV