Nonvolatile charge capture type storage device, preparation method thereof and application

Abstract

A non-volatile charge capture storage device, a method for preparing the same and an application thereof. The preparation method is simple to operate and easy to control, and the nano-microcrystal acting as a storage medium in the obtained storage device is evenly distributed. The preparation method includes the steps of: a) forming a tunneling layer on the substrate surface; b) forming a (ZrO2)x(M)1-x thin film with homogeneous composition acting as a storage layer on the tunneling layer, wherein l > x > 0.5, M is SiO2 or Al2O3; c) forming a barrier layer on the storage layer; d) and annealing the above prepared sample so as to precipitate the nano-microcrystal ZrO2 from the storage layer to act as the storage medium. By way of high temperature annealing processing, the nano-microcrystal ZrO2 is precipitated from the parent phase of the storage layer, thereby realizing the effect of nano-microcrystal storage. The nano-microcrystal acting as the storage medium obtained in the method is evenly distributed in the non-crystal parent phase.

Description

technical field [0001] The invention relates to a nonvolatile charge trapping memory device, its preparation method and application. Background technique [0002] For decades, the development of integrated circuits has basically followed the Moore's Law predicted by Dr. Gordon E. Moore, one of the founders of Intel Corporation, in 1964: 12 to 18 months doubles, feature size shrinks times. As the feature size of devices becomes smaller and smaller, traditional floating-gate non-volatile semiconductor memory devices face serious leakage problems. The size of the tunneling layer in the floating gate memory device is continuously reduced, so that a single defect will cause all the charges stored in the polysilicon floating gate to be lost. To solve this difficult problem, polysilicon-oxide-nitride-oxide-silicon (SONOS) type semiconductor memory devices have been extensively studied. In such devices, electrons are captured by the Si 3 N 4 A discrete trap capture in the sto...

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Problems solved by technology

However, many researchers spend most of their energy on the preparation of metal nanocrystals and semiconductor nanocrystals for storage devices, and there is less research on other forms of nanocrystals

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