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Substrate for flexible luminescent device and preparation method thereof

A light-emitting device and substrate technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as poor bonding force and large roughness of silver nanowire film, and achieve increased bonding force and high visible light transmittance. The effect of passing rate and improving flatness

Inactive Publication Date: 2011-10-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem to be solved by the present invention is: how to provide a substrate for a flexible light-emitting device and its preparation method, the substrate solves the problems of large roughness of the silver nanowire film and poor bonding force between the silver nanowire film and the flexible substrate, Improve the flatness of the silver nanowire film surface and the bonding force between the silver nanowire film and the flexible substrate

Method used

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  • Substrate for flexible luminescent device and preparation method thereof
  • Substrate for flexible luminescent device and preparation method thereof
  • Substrate for flexible luminescent device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 In the shown substrate structure, the flexible substrate 1 is made of polyethylene, the conductive layer 2 is made of silver nanowire film, and the gaps of the silver nanowire film are filled with organic light-emitting materials.

[0031] The preparation method is as follows:

[0032] ① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;

[0033] ② Disperse the silver nanowires evenly in the solvent, and prepare the silver nanowire film on the clean silicon substrate by spin coating. The rotation speed of the spin coating is 4000 rpm, the duration is 60 seconds, and the film thickness is about 80 nanometers;

[0034] ③ Spray a solution containing organic light-emitting materials on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polyethylene on the silver nanowire film; ...

Embodiment 2

[0039] Such as figure 1 In the substrate structure shown, the flexible substrate 1 is made of polymethyl methacrylate, the conductive layer 2 is made of silver nanowire film, and the gaps of the silver nanowire film are filled with organic light-emitting materials.

[0040] The preparation method is as follows:

[0041] ① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;

[0042] ② Disperse the silver nanowires evenly in the solvent, and prepare the silver nanowire film on the clean silicon substrate by spraying;

[0043] ③ Spray a solution containing organic light-emitting materials on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polymethacrylic acid on the silver nanowire film Methyl ester;

[0044] ④ Thermal curing treatment on the surface of the silicon substrate;

[0045] ⑤Peel the ...

Embodiment 3

[0048] Such as figure 1 In the shown substrate structure, the flexible substrate 1 is made of polycarbonate, the conductive layer 2 is made of silver nanowire film, and the gaps of the silver nanowire film are filled with organic light-emitting materials.

[0049] The preparation method is as follows:

[0050] ① Clean the silicon substrate whose surface roughness is less than 1nm, and dry it with dry nitrogen after cleaning;

[0051] ② Disperse silver nanowires evenly in a solvent, and prepare silver nanowire films on a clean silicon substrate by screen printing;

[0052] ③ Spray a solution containing an organic luminescent material on the silver nanowire film, place the silicon substrate in an environment of 80°C for 30 minutes, remove the remaining solvent in the silver nanowire film, and then spray polycarbonate on the silver nanowire film;

[0053] ④ Thermal curing treatment on the surface of the silicon substrate;

[0054] ⑤Peel the silver nanowire film and the cured p...

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Abstract

The invention discloses a substrate for a flexible luminescent device, comprising a flexible substrate and a conductive layer. The substrate for the flexible luminescent device is characterized in that the flexible substrate and the conductive layer are formed by one of the following two modes: (1) the flexible substrate is a transparent dielectric polymer material while the conductive layer is asilver nanowire film, and an organic luminescent material is filled in a gap of the silver nanowire film; and (2) the flexible substrate is a transparent dielectric polymer material doped with an organic luminescent material while the conductive layer is a silver nanowire film, and the transparent dielectric polymer material doped with the organic luminescent material is filled in a gap of the silver nanowire film. According to the substrate, the problems of large roughness of the silver nanowire film and poor bonding force between the silver nanowire film and the flexible substrate are solved, the surface flatness of the silver nanowire film is improved and the bonding force between the silver nanowire film and the flexible substrate is also increased.

Description

technical field [0001] The invention relates to the technical field of organic optoelectronics, in particular to a substrate for a flexible light-emitting device and a preparation method thereof. Background technique [0002] Optoelectronics technology is a rapidly developing industry with high technological content after microelectronics technology. With the rapid development of optoelectronic technology, optoelectronic products such as solar cells, optical image sensors, flat panel displays, and thin film transistors have gradually matured, and they have greatly improved people's lives. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market. Developed countries regard the optoelectronic information industry as one of the key development areas, and the competition in the optoelectronic information field is unfolding worldwide. [0003] At present, organic optoelectronic device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
Inventor 于军胜李璐马柱蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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