Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates

A technology of surfactant and defoaming agent, applied in the field of products manufactured by this method, can solve problems such as damage to incinerator construction materials, unacceptable incineration system, etc.

Inactive Publication Date: 2011-10-12
ADVANCED TECH MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Disadvantageously, incineration systems cannot accept wastewater samples containing high fluo

Method used

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  • Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
  • Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates
  • Use of surfactant/defoamer mixtures for enhanced metals loading and surface passivation of silicon substrates

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0113] A concentrated removal composition was prepared as follows: 6.75% by weight NHCl, 43.6% by weight water, 30% by weight HF (49%), 15% by weight HEDP (60%), 4.5% by weight Dowfax3B2 (45%) (Dowfax3B2 is as 45% by weight % solution purchased and used as such) and 0.15% by weight of antifoaming agent, wherein the antifoaming agent is RA20 (Formulation A), P1 (Formulation B), 17R2 (Formulation C), 17R4 (Formulation D), or One of 25R2 (Formulation E). Each concentrated composition was diluted 2:1 with 30% hydrogen peroxide (ie, 2 parts concentrate to 1 part 30% H2O2) prior to use.

[0114] Another set of concentrated removal compositions was prepared as follows: 6.75% by weight NHCl, 47.5% by weight water, 30% by weight HF (49%), 15% by weight HEDP (60%), and 0.75% by weight Foaming agent is RA20 (Formulation F), P1 (Formulation G), 17R2 (Formulation H), 17R4 (Formulation I), or One of 25R2 (Formulation J). Each concentrated composition was diluted 2:1 wit...

example 2

[0131] A concentrated removal composition was prepared as follows: 4.5% by weight NH4Cl, 20% by weight HF (49%), 10% by weight HEDP (60%), 3.04% by weight Dowfax3B2 (45%), 0.104% by weight 25R2, 33.4% by weight H2O2 (30%), additional substances in the amounts shown in Table 5, and the balance is water, wherein such additional substances are diethylene glycol monobutyl ether (hereinafter referred to as BC), dipropylene glycol monobutyl ether Propyl ether (hereinafter referred to as DPGPE) or propylene glycol (hereinafter referred to as PG). The foam height test described in Example 1 was performed at room temperature and the results are shown in Table 5.

[0132] Table 5: Foaming at room temperature for different removal compositions

[0133]

example 3

[0135] Prepare the following formulations:

[0136] Formulation M: 4.5 wt% NH 4 Cl, 20 wt% HF (49%), 10 wt% HEDP (60%), 3 wt% Dowfax 3B2 (45%), 0.1 wt% Super Defoamer 225, 33.4 wt% H 2 o 2 (30%), 29% by weight water

[0137] Formulation N: 4.5 wt% NH 4 Cl, 20 wt% HF (49%), 10 wt% HEDP (60%), 3 wt% Dowfax3B2 (45%), 0.1 wt% 31R2, 33.4 wt% H 2 o 2 (30%), 29% by weight water

[0138] Formulation O: 4.5 wt% NH 4 Cl, 20 wt% HF (49%), 10 wt% HEDP (60%), 3 wt% Dowfax3B2 (45%), 0.5 wt% 25R2, 33.4 wt% H 2 o 2 (30%), 2% by weight sodium toluenesulfonate, 26.6% by weight water

[0139] Formulation P: 4.5% by weight NH 4 Cl, 20 wt% HF (49%), 10 wt% HEDP (60%), 3 wt% Dowfax3B2 (45%), 0.07 wt% Super Defoamer 225, 33.4 wt% H2O2 (30%), 29.03 wt% water

[0140] Formulation Q: 4.5 wt% NH 4 Cl, 20 wt% HF (49%), 10 wt% HEDP (60%), 3 wt% Dowfax 3B2 (45%), 0.02 wt% Super Defoamer 225, 33.4 wt% H 2 o 2 (30%), 29.08% by weight water

[0141] Formulation R: 4.5 wt% NH 4 Cl, 20 wt% ...

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Abstract

Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and / or reuse of said structure.

Description

technical field [0001] The present invention generally relates to methods of removing a layer of material, e.g., a low-k dielectric material, from a substrate or article having the material thereon to recycle, reprocess, recycle, and / or reuse the substrate or article, and to products manufactured by the method. Background technique [0002] As device dimensions decrease, the increasing demand for performance associated with high-density, ultra-large scale integration (ULSI) semiconductor wiring increasingly requires the use of low dielectric constant (low-k) insulating layers to increase signal transmission speeds. [0003] Typical low-k materials include carbon-doped oxides (CDO) deposited using commercially available precursors, such as SiLK TM 、AURORA TM 、CORAL TM , or black diamond (BLACKDIAMOND) TM , such as using a proprietary carbonado TM method. Such CDOs are typically formed from organosilanes and organosiloxane precursors using chemical vapor deposition (CVD)...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L21/3063H01L21/301
CPCH01L21/31111C09K13/08C11D1/00C11D1/008C11D1/72C11D1/78C11D3/0026C11D3/042C11D3/2068C11D3/37C11D3/3707C11D11/0047C23F1/18H01L21/02032H01L21/32134
Inventor 迈克尔·B·科赞斯基江平查尔斯·贝奥米克·贝耶罗帕弗里克
Owner ADVANCED TECH MATERIALS INC
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