Dry etching method and dry etching apparatus
A dry etching and equipment technology, applied in the field of dry etching technology, can solve the problems of high dielectric attenuation factor, fracture, dielectric component fracture, etc., and achieve the effects of simplifying equipment structure, reducing cost, and suppressing the generation of particles
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no. 1 example
[0060] figure 1 It is a schematic diagram of the dry etching equipment according to the first embodiment of the present invention. The dry etching equipment 10 includes a plasma source 14 (corresponding to "plasma generation unit") for generating high-density plasma in a vacuum chamber 12 (corresponding to "vacuum container"), and the vacuum chamber 12 is equipped with An exhaust system (not shown) capable of exhausting gas via the exhaust duct 11, and a process gas introduction port 16 (corresponding to the "gas supply passage") and a workbench 18 are provided in the vacuum chamber 12 for A substrate 20 as a part to be etched (processing object) is supported and fixed.
[0061] The plasma source 14 has a structure in which a strip-shaped mesh electrode 32 is wound around a cylindrical discharge tube 30 (corresponding to a "dielectric member"), and the strip-shaped electrode 32 is connected to a high-frequency power supply 36 via a power supply line 34 ( Corresponds to "High...
example
[0072] Example: Etching example of lead zirconate titanate (PZT)
[0073] Figure 4 show use figure 1 The result of etching of PZT, which is a ferroelectric material, is performed by the dry etching apparatus 10 shown in . Figure 4 It is a graph showing the relationship between the value of Vdc and the etching rate of PZT. The horizontal axis represents Vdc, and the vertical axis represents etch rate. In this example, the DC component (Vdc) of the substrate bias voltage was varied by controlling the output voltage of the DC power supply 54, and the etch rate was evaluated under different conditions. In addition, by changing the distance Z ( figure 1 The distance in the vertical direction) to evaluate the change of etch rate.
[0074] Forming a film of platinum (Pt) of about 200 nm thick and a film of PZT of about 5.0 μm thick on a substrate in which a silicon oxide film of 200 nm thick has been formed on a silicon substrate by means of a sputtering method A substrate ...
no. 2 example
[0144] Figure 7 It is a schematic diagram of the dry etching equipment 100 according to the second embodiment of the present invention. exist Figure 7 in, with figure 1 Components that are identical or similar to those shown are assigned the same reference numerals, and further description thereof is omitted here.
[0145] Figure 7 The dry etching apparatus 100 shown in is an example corresponding to a large-sized substrate, and the vacuum chamber 12 is equipped with a plurality of plasma sources 14A, 14B, 14C, . . . Figure 8 is a plan view of the dry etching apparatus 100 viewed from above.
[0146] exist Figure 8 In the dry etching apparatus 100 shown in , five plasma sources 14A to 14E are installed in the upper part of the vacuum chamber 12 (see Figure 8 ), but there is no particular limitation on the number or arrangement of the installed plasma sources. The plasma sources 14A to 14E have as figure 1 A similar structure to the plasma source 14 described in ....
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