Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-modulus epoxy resin system and preparation method thereof

An epoxy resin system and epoxy resin technology, applied in the field of microelectronic packaging materials, can solve the problems of difficult control, low mechanical strength, and underfills that cannot completely fill chips and substrates, and achieve broad application prospects and low curing temperature. low effect

Inactive Publication Date: 2011-10-26
FUDAN UNIV
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with traditional dielectric materials, low dielectric constant materials have less mechanical strength and poorer bonding strength, while existing packaging materials such as underfills and molding compounds have larger moduli, when they When directly applied to the packaging of copper / low dielectric constant material process devices, the internal stress generated by the excessive modulus of the packaging material will lead to the destruction of the low dielectric constant material layer, advanced packaging (such as stacked chip packaging, through silicon vias ( TSV) technology, etc.) may also warp or crack due to excessive internal stress in the package
In order to solve the problem of excessive modulus of packaging materials, the researchers tried to reduce the overflow angle and height of the underfill material to reduce the stress of the packaging system and improve the reliability of the package. Cannot completely fill the space between the chip and the substrate, which may cause performance degradation or even package failure due to the intrusion of moisture and other impurities into the packaging system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-modulus epoxy resin system and preparation method thereof
  • Low-modulus epoxy resin system and preparation method thereof
  • Low-modulus epoxy resin system and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 Aliphatic polythiol curing system: Bisphenol A diglycidyl ether (10 g, Dow Chemical Company DER 332) and aliphatic polythiol (10 g, Corning 3800) were mixed evenly, and placed in a vacuum After degassing in the oven, add the curing accelerator DMP-30 (0.5 g), mix well, put it into the mold, and heat it in an oven at 80°C for 30 minutes to make it fully cured. The glass transition temperature of the cured product is 18°C, the storage modulus is 150 MPa (25°C), and the linear expansion coefficient is 209×10 -6 / °C (50-200°C), the volume resistivity is 2.0×10 10 Ω·m.

Embodiment 2

[0021] Example 2 Aromatic polythiol curing system: Bisphenol A diglycidyl ether (10 g, Dow Chemical Company DER 332) and aromatic polythiol (7.1 g, Sakai Chemical Co. 804) were mixed evenly, and placed in a vacuum After degassing in the oven, add the curing accelerator DMP-30 (0.5 g), mix well, put it into the mold, and heat it in an oven at 80°C for 30 minutes to make it fully cured. The glass transition temperature of the cured product is 47°C, the storage modulus is 508 MPa (25°C), and the coefficient of linear expansion is 185×10 -6 / °C (40-200°C), the volume resistivity is 2.1×10 10 Ω·m.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
glass transition temperatureaaaaaaaaaa
storage modulusaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of electronic packaging materials, and particularly relates to a low-modulus epoxy resin system and a preparation method thereof. The low-modulus epoxy resin system of the invention comprises the following main components: epoxy resin, a polymercaptan curing agent, a tertiary amine curing accelerator and the like, and has the characteristics of low curing temperature, adjustable gel reaction speed, low modulus of curing products, and adjustable modulus by the addition of inorganic fillers. The low-modulus epoxy resin system can be used as a substrate resin of electronic packaging materials such as bottom fillers, encapsulation agents, chip adhesives and the like for reducing packaging internal stress, and has wide application prospects in the electronic packaging field.

Description

technical field [0001] The invention belongs to the technical field of microelectronic packaging materials, and in particular relates to a low-modulus epoxy resin system and a preparation method thereof. Background technique [0002] Epoxy resin has the advantages of excellent adhesion, good thermal stability and electrical insulation, low curing shrinkage, light weight, and low cost, and has been widely used in microelectronic packaging. Epoxy resin-based composite materials are used Used as underfill material (Underfill) to increase the reliability of flip-chip interconnection; epoxy molding compound is widely used in the molding and encapsulation process of various electronic packaging products to provide various protection for electronic products. In recent years, with the continuous reduction of the size of the integrated circuit manufacturing process, the integration and performance of the electronic system have been continuously improved. However, the signal delay cau...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08L63/00C08L63/02C08G59/66C08K3/34C08K3/22C08K3/28C08K3/26
Inventor 杨庆旭肖斐
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products