Method for producing ZnSO alloy film with adjustable sulfur-doped growth band gap

An alloy film, sulfur doping technology, applied in metal material coating process, ion implantation plating, coating and other directions, to achieve the effect of good repeatability and stability, good optical performance

Active Publication Date: 2011-10-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, no pulsed laser deposition method has been us

Method used

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  • Method for producing ZnSO alloy film with adjustable sulfur-doped growth band gap
  • Method for producing ZnSO alloy film with adjustable sulfur-doped growth band gap
  • Method for producing ZnSO alloy film with adjustable sulfur-doped growth band gap

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1) Take zinc oxide with a purity of 99.99% and zinc sulfide powder with a purity of 99.99%, and the S molar content is 10%, and mix the mixed powder of ZnO and ZnS. After the mixture is uniform, the powder is hydraulically formed into a disc with a thickness of 3 mm and a diameter of 50 mm at high temperature to obtain a target.

[0019] 2) Using quartz as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. -4 Pa, and then heated the substrate so that the substrate temperature was 300 °C, with ZnS-doped ZnO as the target, the distance between the substrate and the target was adjusted to 4.5 cm, the laser frequency was 3 Hz, and the laser energy was 250 mJ. The time is 30 minutes. After growth, it was cooled to room temperature at a cooling rate of 3 ℃ / min to obtain S-doped ZnSO alloy films with tunable bandgap.

[0020] The obtained S-doped ZnSO alloy film with tunable bandgap has a forbidden ban...

Embodiment 2

[0022] 1) Take zinc oxide with a purity of 99.99% and zinc sulfide powder with a purity of 99.99%, and the S molar content is 30%, and mix the mixed powder of ZnO and ZnS. After the mixture is uniform, the powder is hydraulically formed into a disc with a thickness of 3 mm and a diameter of 50 mm at high temperature to obtain a target.

[0023] 2) Use quartz as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. -4 Pa, and then heated the substrate so that the substrate temperature was 400 °C, with ZnS-doped ZnO as the target, the distance between the substrate and the target was adjusted to 5 cm, the laser frequency was 5 Hz, and the laser energy was 300 mJ. The time is 30 minutes. After growth, it was cooled to room temperature at a cooling rate of 5 ℃ / min to obtain S-doped ZnSO alloy films with tunable bandgap.

[0024] The obtained S-doped ZnSO alloy thin film with tunable bandgap has a forbidden ba...

Embodiment 3

[0026] 1) Take zinc oxide with a purity of 99.99% and zinc sulfide powder with a purity of 99.99%, and the S molar content is 40%, and mix the mixed powder of ZnO and ZnS. After the mixture is uniform, the powder is hydraulically formed into a disc with a thickness of 3 mm and a diameter of 50 mm at high temperature to obtain a target.

[0027] 2) Using quartz as the substrate, clean the surface of the substrate and put it into the growth chamber of the pulsed laser deposition device. -3 Pa, and then heated the substrate so that the substrate temperature was 500 °C, with ZnS-doped ZnO as the target, the distance between the substrate and the target was adjusted to 5.5 cm, the laser frequency was 10 Hz, and the laser energy was 350 mJ. The grown The time is 30 minutes. After growth, it was cooled to room temperature at a cooling rate of 10 ℃ / min to obtain S-doped ZnSO alloy films with tunable bandgap.

[0028] The obtained S-doped ZnSO alloy film with tunable bandgap has a f...

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Abstract

The invention discloses a method for producing ZnSO alloy film with an adjustable sulfur-doped growth band gap, which uses a pulse laser deposition method. A target material is produced by mixing pure zinc oxide and pure zinc sulfide powder for hydraulic forming to obtain a ceramic target, wherein mole content of zinc sulfide is 10 to 40%; the target material is arranged in a growth chamber of a pulsed-laser deposition device, wherein the degree of vacuum is 1*10(-4) to 1*10(-3)Pa, the laser frequency is 3 to 10Hz, the growth temperature is from 300 to 500 DEG C, a ZnSO alloy film with an adjustable band gap is grown on a substrate. A real time doping can be realized according to the method provided in the invention, the doping concentration can be controlled by regulating the growth temperature and mole content of sulfur in the target material. Method for producing the ZnSO alloy film with adjustable sulfur-doped growth band gap provided in the invention has the advantages of good optical performance, repeatability and stability.

Description

technical field [0001] The invention relates to a growth method of ZnSO alloy film with adjustable band gap. Background technique [0002] ZnO is a compound semiconductor material with a wide bandgap (3.3 eV), which is rich in raw materials, cheap, non-toxic, easy to achieve doping and alloying, and its deposition temperature is relatively low and it has good stability in a plasma environment, etc. advantage. Energy band engineering, also known as energy band tailoring, refers to the artificial design and optimization of material components and structures to achieve performance that cannot be achieved by homogeneous structures, and it is also a crucial step in the design of modern optoelectronic devices . To realize commercial ZnO light-emitting devices, the bandgap tuning of ZnO materials must be satisfied. Generally, Zn is formed by doping Mg and Be by equivalent cation doping 1-x Mg x O and Zn 1-x be x O alloy film to increase the bandgap width, and doping Cd to fo...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/28
Inventor 朱丽萍蒋杰周惟舜曹铃李洋叶志镇
Owner ZHEJIANG UNIV
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