Preparation method of single crystal silicon texture surface structure

Abstract

The invention provides a preparation method of a single crystal silicon texture surface structure, relates to the technical field of solar energy application, and is invented to effectively reduce reflection loss of incident light of a texture surface and to increase forming speed of a texture surface. The preparation method of a single crystal silicon texture surface comprises the following steps: depositing discrete metal particles on a silicon wafer surface; performing corrosion of the silicon wafer deposited with metal particles by a mixed solution of hydrofluoric acid and hydrogen peroxide so as to form a texture surface structure on the silicon wafer surface. The invention is applicable to the preparation process of solar cells.

Description

technical field [0001] The invention relates to the technical field of solar energy applications, in particular to a method for preparing a monocrystalline silicon textured structure. Background technique [0002] The preparation of the textured structure is a common process in the production process of crystalline silicon solar cells. The textured structure can effectively reduce the reflection loss of incident light on the surface of the silicon wafer, increase the utilization rate of light, and then improve the conversion efficiency of the cell. Such as figure 1 As shown, the typical structure of suede currently used is a suede pyramid structure. For a smooth silicon wafer, about 33% of the sunlight incident on the surface is reflected by the surface and cannot be absorbed by the battery. For the suede pyramid structure, due to the pyramid structure on the surface, the incident reflected light will be incident again to reduce the reflection loss. [0003] In the prior ...

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Problems solved by technology

[0004] However, in the process of realizing the preparation of the above-mentioned textured structure, the inventors found that there are at least the following problems in the prior art: although the textured structure prepared by the chemical corrosion method reduces the reflection loss of sunlight relative to the smooth structure, due to The size of the suede pyramid prepared by this method is usually in the order of 3-15 microns (um), which is much higher than the wavelength of the incident light. figure 2 It can be seen that there is still no less than 15% reflectance in the 600nm wavelength band that absorbs the strongest sunlight, which limits the efficiency of the battery

In addition, the formation speed of the suede surface is relatively slow in this method, and it usually takes about 30 minutes (min) of corrosion to prepare the suede structure, which restricts the production capacity.

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