Method for realizing light transmission of thin film solar module by using vibrating mirror laser equipment
A technology of solar thin film and laser equipment, applied in laser welding equipment, electrical components, welding equipment and other directions, can solve problems such as affecting the efficiency and yield of components, unable to change graphics and patterns, affecting the electrical characteristics of batteries, etc., and achieve high work efficiency , flexible graphics changes, easy to achieve effects
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Embodiment 1
[0028] The method for realizing the light transmission of the solar thin film battery module by applying the galvanometer laser device includes the following steps:
[0029] a. See attached figure 1 : On the float glass substrate 1, use low-pressure chemical vapor deposition technology or magnetron sputtering technology to deposit a transparent conductive film as the front electrode layer 2 of the battery; then use plasma chemical vapor deposition technology (PECVD) to coat the glass substrate Thin-film silicon p-i-n or p-i-n / p-i-n laminate structure and triple-junction silicon-based thin-film photoelectric conversion layer 3 are deposited on it; a transparent conductive film is grown on the above photoelectric conversion layer by low-pressure chemical vapor deposition technology as the back electrode layer 4 of the battery;
[0030] b. See attached figure 2 : the present embodiment adopts strip-shaped insulating area 5, and this area is used for carrying out light-transmitt...
Embodiment 2
[0038] The method for realizing the light transmission of the solar thin film battery module by applying the galvanometer laser device includes the following steps:
[0039] a. See attached figure 1 : On the float glass substrate 1, use low-pressure chemical vapor deposition technology or magnetron sputtering technology to deposit a transparent conductive film as the front electrode layer 2 of the battery; then use plasma chemical vapor deposition technology (PECVD) to coat the glass substrate Thin-film silicon p-i-n or p-i-n / p-i-n laminate structure and triple-junction silicon-based thin-film photoelectric conversion layer 3 are deposited on it; a transparent conductive film is grown on the above photoelectric conversion layer by low-pressure chemical vapor deposition technology as the back electrode layer 4 of the battery;
[0040] b. See attached image 3 : The present embodiment adopts a rectangular insulating area 5, which is used for light-transmitting treatment, and th...
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