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Cuprous oxide thin film transistor and preparing method thereof

A thin-film transistor and thin-film technology, applied in the field of Cu2O thin-film transistor and its preparation, to achieve good insulation performance and reduce the absorption of water or oxygen

Active Publication Date: 2013-05-08
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is very challenging to obtain a p-type MOTFT

Method used

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  • Cuprous oxide thin film transistor and preparing method thereof
  • Cuprous oxide thin film transistor and preparing method thereof

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Embodiment Construction

[0018] The present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0019] The embodiment of the present invention proposes a Cu 2 O thin film transistor comprising Cu 3 The N thin film acts as an insulating layer and / or a protective layer. Cu 3 The N thin film has an amorphous structure and has good insulating properties. And with Cu 2 O thin film compared to Cu 3 N thin films are dense in structure and hydrophobic or oxygen. with Cu 3 N film as Cu 2 The protective layer of the O channel will reduce the absorption of water or oxygen in the environment by the thin film, thereby improving the environment and the stability of the electrical bias stress (Electrical bias stress, EBS) of the thin film transistor.

[0020] Further, the thin film transistor includes single-phase, high mobility and easily controllable hole concentration Cu 2 O thin film as the active layer. In Cu 2 During the p...

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Abstract

The invention claims a Cu2O thin film transistor. An insulating layer and / or a protecting layer of the Cu2O thin film transistor is a Cu3N thin film; the Cu3N thin film is of a non-crystal structure and has excellent insulating property. In comparison with the Cu2O thin film, the Cu3N thin film is compact in structure, and hydrophobic or oxygen-phobic; application of the Cu3N thin film as the protecting layer of a Cu2O channel can reduce absorption of water or oxygen in the environment by the thin film, so that environment and electro-dynamic deflection stress stability of the thin film transistor are improved.

Description

technical field [0001] The present invention relates to a Cu 2 O thin film transistor and its preparation method. Background technique [0002] Over the past 30 years, large-scale (area) microelectronics technology based on thin film transistors (Thin Film Transistor, TFT) has led to active matrix (Active Matrix, AM) liquid crystal display (AM-LCD, Active Matrix-Liquid Crystal Display), active Active matrix flat panel display (AM-FPD, ActiVe Matrix-Flat Panel Display) technologies such as AM-OLED (AM-OLED, ActiVe Matrix-Organic Light-Emitting Diode) are rapidly developing. AM-FPD has become the mainstream technology of modern information display. Currently commercialized AM-LCDs use amorphous silicon thin film transistors (a-Si TFT) or polysilicon thin film transistors (poly-Si TFT). In recent years, studies have shown that metal oxide semiconductors (Oxide Semiconductor, referred to as OS) have high mobility (10-70cm 2 (V.s) -1 ), optical transparency and low-temperatu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/26H01L21/336
CPCH01L29/7869H01L29/242H01L29/41733H01L29/4908H01L29/66969
Inventor 姚建可张盛东
Owner BOE TECH GRP CO LTD