Multi-source integrated color-adjustable light-emitting component and preparation method thereof

A technology of light-emitting components and colors, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of difficult to achieve ideal effect of light color mixing, uncontrollable color purity, and shortened LED life.

Inactive Publication Date: 2013-01-02
楼刚
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A display screen requires a large number of LED particles, but the color difference of LEDs in different production batches is large, and due to the size limitation of LED particles, the resolution at close range is low, resulting in the narrowing of the application range of LED display screens
Although the method of externally coating phosphor powder is low in cost and simple in process, the phosphor powder is prone to failure, resulting in a reduction in the life of the entire LED, and the luminous efficiency of the phosphor powder limits the overall luminous efficiency of the LED.
[0003] A published patent (application number CN200410009267.3, quantum dot active region structure and epitaxial growth method of wide-spectrum white light LED) proposes a method of using quantum dots to manufacture white light LEDs, which uses self-organized growth methods to grow quantum dots, The size of quantum dots fluctuates randomly and the spectrum is wide, but the control requirements for quantum dot growth are high, the wavelength is easy to shift, and the purity of color cannot be controlled
A published patent (application number CN 200410000148.1, light-emitting diode structure) proposes to use quantum wells with different wavelengths to be stacked in the active layer to emit red, green, and blue light at the same time to manufacture white LEDs. However, different quantum wells interfere with each other, and the wavelength is affected by the current and voltage. The influence is difficult to control, and the color mixing of light is difficult to achieve the desired effect

Method used

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  • Multi-source integrated color-adjustable light-emitting component and preparation method thereof
  • Multi-source integrated color-adjustable light-emitting component and preparation method thereof
  • Multi-source integrated color-adjustable light-emitting component and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0070] Red, green and blue three-color integrated and adjustable gallium nitride (GaN)-based light-emitting element, the structural diagram of the single-wavelength light-emitting part can be found in figure 1 , including from bottom to top:

[0071] (1) Substrate 17

[0072] A transparent growth substrate 17, the material of which can be sapphire;

[0073] (2) Buffer layer 16b

[0074] Close to the side of the substrate 17 is a layer of about 1000nm GaN buffer layer 16b, which can be n-type doped or not mixed according to the chip structure. GaN layer 1604 for reducing lattice mismatch;

[0075] (3) n-type semiconductor contact layer 16a

[0076] On the buffer layer 16b is an n-type semiconductor contact layer 16a of about 2000nm GaN material, which includes: a 500nm n-type GaN alignment layer 1602, the present embodiment adopts 500nm GaN:Si, n≥5×10 18 cm -3 , for etching into an array of quantum dot positioning holes; a 40nm n-type GaN improvement layer 1601 is deposit...

Embodiment 2

[0119] Red, green and blue three-color integrated and adjustable gallium nitride (GaN)-based light-emitting element, the structural diagram of the single-wavelength light-emitting part can be found in Figure 5 , including from bottom to top:

[0120] (1) substrate 57;

[0121] (2) buffer layer 56b;

[0122] (3) n-type semiconductor contact layer 56a;

[0123] (4) n-type semiconductor barrier layer 55;

[0124] (5) active layer 54;

[0125] (6) p-type semiconductor barrier layer 53;

[0126] (7) p-type semiconductor contact layer 52;

[0127] (8) Electrode layer 51 .

[0128] The difference between the single emission wavelength structure of this embodiment and the first embodiment lies in the active layer. Its active layer 54 uses mixed quantum dots and quantum wells as the main light-emitting structure, and at least includes from bottom to top:

[0129] 5-20nm GaN lower layer semiconductor pad layer 5401; its energy gap is larger than the quantum dot layer 5407, but sm...

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Abstract

The invention relates to a multi-source integrated color-adjustable light-emitting component and a preparation method thereof. The multi-source integrated color-adjustable light-emitting component and preparation method have the advantages of effectively prolonging the service life of products and increasing the light conversion efficiency of light emitting diodes. The multi-source integrated color-adjustable light-emitting component comprises an electrode layer, a p-type semiconductor contact layer, a p-type semiconductor barrier layer, an active layer, an n-type semiconductor barrier layer,an n-type semiconductor contact layer, and a substrate, which are arranged in sequence from top to bottom, wherein the electrode layer is formed by a plurality of p electrodes and a plurality of n electrodes, which are spaced according to different light wavelength regions, and at least one type of electrodes are insulated from one another to independently regulate and control the regions of different light wavelengths; the energy gap of the p-type semiconductor barrier layer is wider than that of the p-type semiconductor contact layer; the light wavelength range of the active layer is from red light to blue light, the active layer has a light-emitting structure formed by quantum dots and quantum wells, and the positions of the quantum dots are restricted in corresponding regions; and theenergy gap of the n-type semiconductor barrier layer is wider than that of the n-type semiconductor contact layer.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a multi-source integrated color-adjustable light-emitting element and a preparation method thereof, belonging to the technical field of optoelectronic devices. Background technique [0002] As a solid-state light source, LED has many advantages such as small size, long life, high brightness, low energy consumption, no secondary pollution, and easy integration. As a green lighting source, it has gradually entered general lighting from the high-end lighting field. Monochrome LEDs have been commercialized, but because of their single color, white light must be combined with multiple LEDs, such as the three primary colors method and the blue-yellow light mixing method, or the externally coated phosphor stimulated emission of other color methods. The combination method of multiple LEDs has flexible luminous colors, but it is difficult to mass-produce, and it is mostly used to manufacture hi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 楼刚兰红波
Owner 楼刚
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