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Multi-layer structure including silicon nanocrystals and method for fabricating photo-sensing unit

A multi-layer structure, silicon nanotechnology, applied in the field of technology

Inactive Publication Date: 2011-12-14
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the problems encountered in the above processes, silicon-rich nitrides and silicon-rich oxides are not easy to integrate with general processes. In the process of integrating silicon with simple and high-efficiency light-emitting elements, high-temperature pre-annealing steps are not required, and the process The low temperature polysilicon thin film transistor (LTPS TFT) process integrated with the traditional process is necessary for the light element (light emitting element and light detecting element)

Method used

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  • Multi-layer structure including silicon nanocrystals and method for fabricating photo-sensing unit
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  • Multi-layer structure including silicon nanocrystals and method for fabricating photo-sensing unit

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Embodiment Construction

[0109] The following fit figure 1 An embodiment of the present invention fabricated in a multilayer structure including silicon nanocrystals in a silicon-rich dielectric layer is described through FIG. 5 .

[0110] Please refer to Figure 1 ~ Figure 2D , which describes a multilayer structure 100 comprising silicon nanocrystals 40 in a silicon-rich dielectric layer 30 according to an embodiment of the present invention, figure 1 A cross-sectional view showing a multilayer structure 100 including silicon nanocrystals 40 in a silicon-rich dielectric layer 30, the multilayer structure 100 includes a substrate 10, a first conductive layer 20, a silicon-rich dielectric layer 30, and a silicon-rich dielectric layer A plurality of silicon nanocrystals 40 in 30 . Such as Figure 2D As shown, another conductive layer 50 is formed on the silicon-rich dielectric layer 45 having silicon nanocrystals 40, Figure 3A show Figure 2A-2D A process flow diagram 300 illustrating how the m...

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Abstract

The present invention relates to a layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, where the laser-induced aggregation silicon nano-dots are formed by a laser-induced aggregation process applied to the silicon-rich dielectric layer, and applications of the same. In one embodiment, the silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, and a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer is usable in a solar cell, a photosensitive element, a touch panel, a non-volatile memory device as storage node, and a display panel, respectively.

Description

[0001] This application is a divisional application of Chinese Patent Application No. 200810008557.4 with a filing date of January 23, 2008 and an invention title of "Multilayer Structure Including Silicon Nanocrystals and Its Fabrication Method". technical field [0002] The invention relates to a process method, in particular to a method for forming nano crystals on a silicon-rich dielectric film by laser annealing. Background technique [0003] Photovoltaic (or photovoltaic) components (Photo-Voltaic Device, PV) are widely used in various areas, such as solar cells, touch displays, ultraviolet blue light (UV-blue) detectors, full-color gamut photodetectors and high resolution thin film transistor displays. Photovoltaic devices are generally formed with nanocrystals, and semiconductor materials such as silicon and germanium are generally used to make nanocrystals according to the energy band of the material and the quantum confinement effect of quantum dots. U.S. Patent P...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/314H01L21/3105H01L31/04H01L31/18H01L29/792H01L29/51H01L27/115H01L21/336H01L21/28H01L21/8247H01L31/08H01L31/06H10B69/00
CPCH01L31/0352Y02E10/50H01L29/66833H01L31/10H01L27/1214Y02E10/547H01L29/42332H01L31/06H01L31/1804H01L29/66825Y02P70/50
Inventor 卓恩宗赵志伟彭佳添刘婉懿孙铭伟
Owner AU OPTRONICS CORP