Projection photoetching system with composite photon sieve

Abstract

The invention relates to the technical field of micro-nanometer processing and discloses a projection photoetching system with a composite photon sieve. The system comprises a lighting system, a mask plate, the composite photon sieve and a substrate, which are sequentially arranged, wherein the lighting system is used for generating an incident light and emitting the incident light to the mask plate; the mask plate is used for providing an object space for imaging the composite photon sieve and emitting the incident light to the composite photon sieve through the mask plate; the composite photon sieve is used for realizing an imaging function and imaging a graph on the mask plate on the substrate; and the substrate is used for receiving an image, formed by the composite photon sieve, of the graph on the mask plate. The composite photon sieve projection photoetching system has the advantages that: because the composite photon sieve is adopted to replace a projection objective in the conventional projection photoetching system, the advantage of high efficiency of the conventional projection photoetching system can be reserved, quick massive photoetching is realized, photoetching efficiency is improved, cost can be effectively reduced, and the volume of the system is reduced.

Description

technical field [0001] The invention relates to the technical field of micro-nano processing, in particular to a composite photon sieve projection photolithography system. Background technique [0002] The projection lithography system is commonly used in the current integrated circuit manufacturing process, that is, the projection objective lens is used to reduce the image on the mask plate on the substrate surface, and then combine with other process steps to realize the transfer of the image. The core structure of the existing projection lithography system is as follows: figure 1 As shown, it consists of an illumination system 1 , a mask plate 2 , a projection objective lens 3 and a substrate 4 . The lighting system 1 is located at the top of the system and is used to generate high-quality incident light sources. The mask plate 2 is located below the illumination system 1 and is used to provide an object space for imaging by the projection objective lens. The projectio...

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Problems solved by technology

[0005] However, both the zone plate maskless direct writing system and the photon sieve maskless direct writing system belong to the direct writing lithography system, which cannot achieve fast mass lithography through the mask, and the efficiency is much lower than that of the projection lithography system.

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