The present invention discloses a method for making a thin film transistor. The method is applied to a display panel copper process. The method comprises a step of forming a first metal layer on a substrate and patterning the first metal layer to form a gate electrode of the thin film transistor, a step of forming a gate insulating layer on the gate, a step of orderly forming a semiconductor layer and a second metal layer on the gate insulating layer, a step of coating the second metal layer with a photoresist, a step of etching the second metal layer and the semiconductor layer to form a border region of the thin film transistor, a step of etching the second metal layer again to form a source electrode, a drain electrode and a back channel region of the thin film transistor, a step of using ashing process to peeling remaining photoresist, and a step of etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, an electric leakage problem of the thin film transistor caused by factors of the diffusion of copper, the pollution of an organic stripping solution and the like is improved.