Power semiconductor assembly with low grid input resistance and manufacturing method thereof

Abstract

The invention discloses a power semiconductor assembly with low grid input resistance and a manufacturing method thereof. The power semiconductor assembly comprises a substrate, at least one channel type transistor, a conductive layer, a metal contact plug, an insulating layer, an interlayer dielectric layer, a grid metal layer and a source metal layer. The metal contact plug can be used as a buried grid metal bus line, so the metal contact plug can pass through the lower part of the source metal layer and still keeps the complete source metal layer. Therefore, the power semiconductor assembly can provide relatively low grid input resistance; and the source metal layer does not need to be segmented, so that the source metal layer can have large area for a subsequent packaging and routing process.

Description

technical field [0001] The invention relates to a power semiconductor component and its manufacturing method, in particular to a power semiconductor component with low gate input resistance and its manufacturing method. Background technique [0002] In a general trench transistor structure, the gate of the transistor is disposed in the trench of the substrate, and the source and drain are respectively disposed on the upper and lower sides of the gate. The vertical structure provides advantages such as high withstand voltage capability, low on resistance (Ron), and high current. Therefore, trench transistors are widely used in power management, such as switching power supplies, computer center or peripheral power management ICs, backlight power supplies, and motor control. [0003] Generally, trench transistors operate under high current. Therefore, in order to reduce power consumption, a gate metal bus line is provided in the prior art to provide an additional gate voltage ...

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Problems solved by technology

[0004] However, as mentioned above, in order to reduce the input resistance of the gate, the power semiconductor components in the prior art need an additional area to set the gate metal bus line 13, so the source metal layer 11 will be divided into two parts for the convenience of the gate. The electrode metal bus line 13 provides the gate voltage to the gate of the trench transistor below each source metal layer 11, but this reduces the area of ​​each part of the source metal layer 11

Accordingly, in the subsequent packaging and bonding process, a smaller area of ​​the source metal layer 11 will increase the difficulty and manufacturing cost of the packaging and bonding process.

In addition, an additional gap needs to be provided to isolate the gate metal bus line 13 from the source metal layer 11, but this further reduces the area available for wiring, and also sacrifices the overall integration.

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