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Process for producing semiconducting layers and coated substrates, in particular planar substrates, treated with elemental selenium and/or elemental sulfur

A semiconductor and elemental sulfur technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, coatings, etc., can solve problems such as toxicity, and achieve high safety, low risk treatment, and low economic cost

Inactive Publication Date: 2015-08-05
PROBST VOLKER (I) (DE)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, due to the toxicity and explosiveness of these gases, the safety risks to production employees from their use should not be underestimated, even when precautions are taken

Method used

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  • Process for producing semiconducting layers and coated substrates, in particular planar substrates, treated with elemental selenium and/or elemental sulfur
  • Process for producing semiconducting layers and coated substrates, in particular planar substrates, treated with elemental selenium and/or elemental sulfur
  • Process for producing semiconducting layers and coated substrates, in particular planar substrates, treated with elemental selenium and/or elemental sulfur

Examples

Experimental program
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Embodiment Construction

[0088] figure 1 shows a processing device 10 according to the invention designed for the formation of Cu(In,Ga)(Se,S) on a substrate 12 for the production of solar cells 2 Thin layer of semiconductor.

[0089] The processing device 10 comprises an evacuatable processing chamber 14 delimited by processing chamber walls 16 . The chamber wall 16 is made of stainless steel and is kept at a temperature in the range of 150° C. to 250° C. by means of a tempering device 18 .

[0090] In this exemplary embodiment, the tempering device 18 is formed by a duct 20 which is attached to the outside of the treatment chamber 14, in particular may be welded to the treatment chamber wall 16, and which is arranged meanderingly around the treatment chamber 14, at A suitable thermal oil flows in the conduit 20 . Alternatively or additionally, hot oil may also flow through channels (not shown) suitably inserted into the process chamber wall 16 . Furthermore, the outer side of the chamber wall 16...

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PUM

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Abstract

A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and / or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and / or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and / or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and / or a second source of elementary selenium and / or sulphur vapor is located inside the processing chamber. The elementary selenium and / or sulphur vapor is guided past the metal layer and / or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and / or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device.

Description

technical field [0001] The invention relates to a method for producing semiconducting layers and coated substrates treated with elemental selenium and / or elemental sulfur, said coated substrates comprising at least one conductor layer, semiconducting layer and / or insulating layer and in particular planar substrates Bottom, wherein, the substrate that is provided with at least one metal layer and / or at least one metal-containing layer, in particular wherein each substrate is provided with at least one metal layer and / or at least one metal-containing layer A stack of substrates is inserted into the processing chamber and heated to a predetermined substrate temperature. Background technique [0002] Methods of this type are basically known and are used, for example, in the production of CIS solar cells in the solar cell industry. In particular, known methods of this type are used for the production of I-III-VI connected semiconductor layers, chalcopyrite semiconductor layers. ...

Claims

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Application Information

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IPC IPC(8): C23C14/58H01L21/00H01L31/00F27B7/00F27B5/04F27B5/14F27B5/16F27D7/04
CPCC23C14/5866C23C16/0209F27B17/0025H01L31/00
Inventor 福尔克尔·普洛波斯特
Owner PROBST VOLKER (I) (DE)
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