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Method for directly preparing graphene on surface of substrate

A substrate surface, graphene technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of difficulty in graphite, difficulty in ensuring conductivity and transparency, and achieve low density, safe and reliable production process, and increased selectivity. Effect

Active Publication Date: 2014-12-24
SHAANXI COAL & CHEM TECH INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the temperature of this process is low and the method is simple, it is difficult to completely reduce graphite oxidized by a strong oxidant, so there is a problem that it is difficult to ensure sufficient conductivity and transparency

Method used

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  • Method for directly preparing graphene on surface of substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Choose Ga powder as the catalyst, mechanically grind the Ga powder evenly, add an organic adhesive (PVB and n-butanol (1:1 by weight) solvent, the dosage is 30% of the total weight of the Ga powder) and then fully mix and grind it into a slurry for later use .

[0041]A square BN sheet with a diameter of 4cm×4cm was selected as the substrate, cleaned with detergent powder and rinsed with deionized water before use, and dried naturally in the air. Drop 1g of the configured catalyst slurry on the substrate, and fix the substrate on a spin coater, rotate at a rate of 500r / min for 30s at the low-speed start-up stage, then rotate at a rate of 1000r / min for 15min, and then dry at room temperature 2h.

[0042] Put the spin-coated catalyst substrate into a high-temperature atmosphere furnace, first evacuate to 20kPa, and then inject 99.9vol.% He gas to atmospheric pressure, repeat three times. The purpose of vacuuming is to remove air and active gases such as oxygen and water...

Embodiment 2

[0046] Choose Zn as the catalyst, mechanically grind the Zn powder evenly, add organic adhesive (PVB and n-butanol (0.1:1 by weight) solvent, the dosage is 5% of the total weight of the Zn powder), mix and grind it into a slurry for later use.

[0047] A square BN sheet with a diameter of 4cm×4cm was selected as the substrate, cleaned with detergent powder and rinsed with deionized water before use, and dried naturally in the air. Drop 1g of the configured catalyst slurry on the substrate, and fix the substrate on a spin coater, rotate at a rate of 500r / min for 30s at the low-speed start-up stage, then rotate at a rate of 1000r / min for 15min, and then dry at room temperature 2h.

[0048] Put the spin-coated catalyst substrate into a high-temperature atmosphere furnace, first evacuate to 20kPa, and then inject 99.9vol.% He gas to atmospheric pressure, repeat three times. The purpose of vacuuming is to remove air and active gases such as oxygen and water in the chamber to maint...

Embodiment 3

[0052] Ga is selected as the catalyst, after the Ga powder is mechanically ground evenly, an organic adhesive (PVB and n-butanol (1.5:1 by weight) solvent, the dosage is 45% of the total weight of the Ga powder) is added and fully mixed and ground into a slurry for later use.

[0053] Select a square Al with a diameter of 4cm×4cm 2 o 3 The film was used as the substrate, cleaned with detergent powder and rinsed with deionized water before use, and dried naturally in the air. Drop 1g of the configured catalyst slurry on the substrate, and fix the substrate on a spin coater, rotate at a rate of 500r / min for 30s at the low-speed start-up stage, then rotate at a rate of 1000r / min for 15min, and then dry at room temperature 2h.

[0054] Put the spin-coated catalyst substrate into a high-temperature atmosphere furnace, first evacuate to 20kPa, and then inject 99.9vol.% He gas to atmospheric pressure, repeat three times. The purpose of vacuuming is to remove air and active gases s...

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Abstract

The invention discloses a method for directly preparing graphene on the surface of a substrate. The method comprises the following steps of: selecting a substrate; adding an organic adhesive in catalyst powder and grinding into slurry; spinning the catalyst slurry on the surface of the substrate and drying; introducing the gaseous CX4 into the spun substrate and growing a graphene film at a high temperature; and annealing the reacted substrate at high temperature under the reduction atmosphere, namely finishing the process of directly preparing the graphene on the surface of the substrate. The graphene product obtained by the method is low in density and high in conductivity and can be applied to various technical fields such as panel display, transistors, micro electronics, photoelectron devices and the like.

Description

technical field [0001] The invention belongs to the technical field of inorganic compounds and nanometer materials, and relates to a preparation method of graphene, in particular to a CX 4 (where X=Br, I) is a method of directly preparing graphene by reacting raw materials with catalysts on the substrate surface. Background technique [0002] In 2004, Andre Geim and Konstantin Novoselov, physicists at the University of Manchester in the United Kingdom, successfully separated graphene from graphite in experiments and confirmed that it can exist alone. They jointly won the 2010 Nobel Prize in Physics for their groundbreaking experiments on two-dimensional graphene materials. [0003] Graphene is a carbon molecule composed of carbon atoms arranged in a hexagonal shape and connected to each other, and its structure is very stable. It has high conductivity, high toughness, high strength and super large specific surface area. The thickness of graphene is only 0.335 nanometers, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 张云付东升杨阳
Owner SHAANXI COAL & CHEM TECH INST
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