Semiconductor integrated circuit and manufacturing method thereof

A technology of integrated circuits and semiconductors, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, circuits, etc., can solve the problems of large turn-on resistance, occupying a large area, and deterioration of metal contact characteristics.

Inactive Publication Date: 2012-01-11
FORCE MOS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially for trench MOSFETs, because this planar contact method needs to occupy a larger area, thereby limiting the further shrinkage of the device, resulting in a larger turn-on resistance of the trench MOSFET
[0006] On the other hand, when the size of the planar contact is reduced, the metal contact characteristics between the source metal and the source and body regions of the trench MOSFET and the anode of the trench Schottky rectifier will be deteriorated.

Method used

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  • Semiconductor integrated circuit and manufacturing method thereof
  • Semiconductor integrated circuit and manufacturing method thereof
  • Semiconductor integrated circuit and manufacturing method thereof

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Embodiment Construction

[0071] The invention is explained in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention can, however, be embodied in different ways and should not be limited to the embodiments described herein. For example, the description herein refers more to N-channel semiconductor integrated circuits, but clearly other devices are also possible.

[0072] refer to image 3 A preferred embodiment of the invention is shown. The N-channel semiconductor integrated circuit according to the preferred embodiment is formed on the N+ doped substrate 300 , and the metal layer Ti / Ni / Ag is deposited on the lower surface of the substrate as the drain metal layer 318 . The N-type epitaxial layer 301 is formed on the upper surface of the N+ substrate 300 , and its concentration of majority carriers is lower than that of the N+ substrate 300 . In the N-type epitaxial layer 301, a plurality of first trench gates 302 loc...

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Abstract

The invention discloses a semiconductor integrated circuit and a manufacturing method thereof. The semiconductor integrated circuit comprises a plurality of grooved metal oxide semiconductor field effect transistors and a plurality of grooved Schottky rectifiers which are positioned on a same substrate, wherein the plurality of grooved metal oxide semiconductor field effect transistors are provided with grooved source contact regions; and the plurality of grooved Schottky rectifiers are provided with grooved anode contact regions. By the semiconductor integrated circuit with the structure, grooved metal oxide semiconductor field effect transistors have lower starting resistance and Schottky rectifiers have lower pre-position voltage and low reverse leakage current.

Description

technical field [0001] The invention mainly relates to a unit structure and a manufacturing method of a semiconductor device. Particularly relate to a kind of improved semiconductor integrated circuit structure and its Manufacturing method. Background technique [0002] In order to achieve a more efficient DC / DC application, in the prior art, a trench Schottky rectifier is usually connected in parallel outside a semiconductor power device, for example, a trench Schottky rectifier is connected in parallel outside a trench MOSFET. When connected in parallel with a parasitic PN body diode in a trench MOSFET, the trench Schottky rectifier acts as a clamping diode to prevent the PN body diode from turning on. Therefore, in the prior art, various structures are disclosed in an attempt to integrate a trench MOSFET and a trench Schottky rectifier on the same substrate to achieve the above-mentioned purpose. [0003] In US Patent No. 6,351,018 and No. 6,987,305, respectively discl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/095H01L29/423H01L29/43H01L21/8234H01L21/336
Inventor 谢福渊
Owner FORCE MOS TECH CO LTD
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