Method for preparing CuWCr composite material through electric arc melting and infiltration method

A technology of arc melting and composite materials, which is applied in the field of material preparation, can solve the problems of low conductivity, high impurity content, and low withstand voltage strength, and achieve the effect of high conductivity, less impurity content, and high withstand voltage strength

Inactive Publication Date: 2012-01-18
XIAN UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing CuWCr composite material by arc smelting and infiltration, which solves the problems of low voltage resistance strength and high impurity content of CuWCr composite material prepared by the existing method and low electrical conductivity

Method used

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  • Method for preparing CuWCr composite material through electric arc melting and infiltration method

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Effect test

preparation example Construction

[0017] Preparation of CuCr Infiltrated Billet

[0018] Weigh 25% to 66% of Cu powder with a purity of not less than 99% and 34% to 75% of Cr powder with a purity of not less than 99.7% by mass percentage and put them into a mixer and mix them for 3 to 6 hours. The powder is molded at 400MPa or cold isostatic pressed at 260MPa, and the pressed billet is placed in a vacuum sintering furnace at a vacuum degree of not less than 10 -2 Raise the temperature to 900°C to 1050°C in a vacuum environment of Pa, and sinter for 60 minutes to 120 minutes to obtain a CuCr infiltrated billet;

[0019] Preparation of W skeleton

[0020] The W powder is pressed into a billet, and the porosity of the billet is controlled at 35% to 40%. The billet is placed in a vacuum sintering furnace, and the vacuum degree is not less than 10 -2 Raise the temperature to 1050°C-1500°C in a vacuum environment of Pa, and sinter for 90-150 minutes to make it sintered into a skeleton;

[0021] Arc melting and po...

Embodiment 1

[0025] First, put 66% of Cu powder and 34% of Cr powder into a mixer and mix for 3 hours, mold the mixed powder at 400MPa, put the pressed billet in a vacuum sintering furnace, and put it in a vacuum degree greater than 10 -2 The temperature was raised to 900° C. under a vacuum environment of Pa, and sintered for 120 minutes to obtain a CuCr infiltrated billet.

[0026] Then, the W powder is molded into a billet under 400MPa, the porosity of the billet is controlled to 40%, and the billet is placed in a vacuum sintering furnace. -2 The temperature was raised to 1050° C. under a vacuum environment of Pa, and sintered for 150 minutes to make it sintered into a skeleton.

[0027] Finally, the prepared W skeleton is placed at the bottom of the water-cooled copper crucible of the consumable electrode arc melting furnace, and the prepared CuCr infiltration billet is placed on the W skeleton, and the vacuum degree is not less than 10 -3 Under the vacuum environment of Pa, adjust th...

Embodiment 2

[0029] First, 25% of Cu powder and 75% of Cr powder were put into a mixer and mixed for 6 hours. The mixed powder was subjected to cold isostatic pressing at 400 MPa, and the pressed billet was placed in a vacuum sintering furnace. Vacuum degree greater than 10 -2 The temperature was raised to 1050° C. under a vacuum environment of Pa, and sintered for 60 minutes to obtain a CuCr infiltrated billet.

[0030] Then, the W powder is subjected to cold isostatic pressing at 260MPa, the porosity of the billet is controlled to 35%, and the billet is placed in a vacuum sintering furnace. -2 The temperature was raised to 1500° C. under a vacuum environment of Pa, and sintered for 90 minutes to make it sintered into a skeleton.

[0031] Finally, the prepared W skeleton is placed at the bottom of the water-cooled copper crucible of the consumable electrode arc melting furnace, and the prepared CuCr infiltration billet is placed on the W skeleton, and the vacuum degree is not less than 1...

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Abstract

The present invention discloses a method for preparing a CuWCr composite material through electric arc melting and an infiltration method. The method comprises: adding Cu powder and Cr powder to a mixer to carry out mixing; carrying out mould pressing or cold isostatic pressing for the mixed material; placing the pressed blank in a vacuum sintering furnace to carry out sintering under a vacuum environment to obtain a CuCr infiltration blank; then carrying out mould pressing or cold isostatic pressing for W powder, and controlling the porosity of the W blank; placing the W blank in the vacuum sintering furnace to carry out sintering under a vacuum environment to obtain a W skeleton; finally, placing the W skeleton on the bottom of a water-cooled copper crucible of a consumable electrode arc melting furnace, placing the prepared CuCr infiltration blank on the W skeleton, carrying out melting for the CuCr infiltration blank under a vacuum environment, such that the CuCr infiltration blank is infiltrated in the W skeleton after the CuCr infiltration blank is molten at high arc temperature; carrying out cooling to obtain the CuWCr composite material. The prepared CuWCr composite material provided by the present invention has characteristics of high voltage strength resistance, high conductivity and low impurity content.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a method for preparing CuWCr composite materials by arc melting and infiltration. Background technique [0002] At present, the methods for preparing CuWCr composite materials are mainly sintering infiltration method and mechanical alloying method. The microstructure of CuWCr composites prepared by sintering infiltration method has independent chromium phase or tungsten phase, which reduces the withstand voltage strength of the material. The degree of alloying of WCr in the CuWCr composite prepared by mechanical alloying method is insufficient, and there is an independent chromium phase, which reduces the withstand voltage strength of the material, and impurities are easily introduced during the preparation process, which reduces the electrical and thermal conductivity of the material. Contents of the invention [0003] The purpose of the present invention is to p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/00C22C9/00C22C27/06C22C30/02
Inventor 肖鹏张亚梅梁淑华
Owner XIAN UNIV OF TECH
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