Polycrystalline silicon etching solution in solar cell and polycrystalline silicon etching process

A technology of solar cells and etchant, applied in crystal growth, post-processing details, post-processing and other directions, can solve the problems of low conversion efficiency, production cannot run normally, surface is not clean, etc., to achieve conversion efficiency and quality improvement, polycrystalline The effect of improving the corrosion effect and shortening the corrosion time

Inactive Publication Date: 2012-01-25
无锡尚品太阳能电力科技有限公司
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the quality problems of the silicon wafer itself and the limitations of the trough-type texturing equipment, etc., the texturing process has brought a lot of troubles, such as shiny surface, dirty surface, black lines on the surface, etc., which make the production It cannot operate normally, the color difference of the produced cells is serious, the conversion efficiency is low, and the pass rate of the product is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: A polysilicon etching solution in a solar cell is prepared by the following method, and its component ratio is calculated in parts by weight:

[0016] Inject 26 parts of deionized water into the corrosion tank, slowly pour 6 parts of hydrofluoric acid into the corrosion tank along the corrosion tank wall, and then slowly pour 64 parts of nitric acid into the corrosion tank along the corrosion tank wall; open The cooling system of the etching tank makes the liquid in the etching tank circulate and cool down, the cycle time is 10 minutes, until the temperature of the liquid in the etching tank reaches 8°C, the etching liquid is obtained; put 200 polycrystalline silicon wafers into the etching liquid at 8°C Carry out corrosion, the corrosion time is 280s, carry out at room temperature. At this time, the surface of the polycrystalline silicon wafer is clean and has good consistency, no black lines on the surface, the suede is uniform, continuous and dense, and...

Embodiment 2

[0017] Embodiment 2: A polysilicon corrosion solution in a solar cell is prepared by the following method, and its component ratio is calculated in parts by weight:

[0018] Inject 27 parts of deionized water into the corrosion tank, slowly pour 7 parts of hydrofluoric acid into the corrosion tank along the corrosion tank wall, and then slowly pour 66 parts of nitric acid into the corrosion tank along the corrosion tank wall; open The cooling system of the etching tank makes the liquid in the etching tank circulate and cool down, the cycle time is 12 minutes, until the temperature of the liquid in the etching tank reaches 6°C, the etching liquid is obtained; put 200 polycrystalline silicon wafers into the etching liquid at 6°C Corrosion is carried out at normal temperature for 300s. At this time, the surface is clean and consistent, there is no black line on the surface, the suede is uniform, continuous and dense, and the weight of the silicon wafer is 0.42g. According to this...

Embodiment 3

[0022] Embodiment 3: A polysilicon etching solution in a solar cell is prepared by the following method, and its component ratio is calculated in parts by weight:

[0023] Inject 28 parts of deionized water into the corrosion tank, slowly pour 6.5 parts of hydrofluoric acid into the corrosion tank along the corrosion tank wall, and then slowly pour 68 parts of nitric acid into the corrosion tank along the corrosion tank wall; open The cooling system of the etching tank makes the liquid in the etching tank circulate and cool down, the cycle time is 15 minutes, until the temperature of the liquid in the etching tank reaches 4°C, the etching liquid is obtained; put 200 polycrystalline silicon wafers into the etching liquid at 4°C Corrosion is carried out, the corrosion time is 320s, and it is carried out at room temperature. At this time, the surface is clean and consistent, there is no black line on the surface, the suede is uniform, continuous and dense, and the weight of the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a polycrystalline silicon etching wafer solution in a solar cell. The solution is characterized by comprising the following components in parts by weight: 6 to 7 parts of hydrofluoric acid, 64 to 68 parts of nitric acid, and 26 to 28 parts of deionized water. An etching process of the polycrystalline silicon in the solar cell is characterized by comprising the following steps: injecting the deionized water into an etching tank; slowly pouring the hydrofluoric acid into the etching tank along the etching tank wall; slowly pouring the nitric acid into the etching tank along the etching tank wall; starting a cooling system of the etching tank to circularly cool a liquid in the etching tank for 10 to 15 minutes until the temperature of the liquid in the etching groove to be between 4 and 8 DEG C to obtain etching solution; and etching a polycrystalline silicon wafer in the etching solution for 280 to 320 seconds. According to the polycrystalline silicon wafer etching solution, the etching time is shortened; the polycrystalline etching effect is improved; the texture of the silicon wafer is uniform, fine and constant, the surface is clean, has good accordance without black lines; and the conversion efficiency and the quality of a solar cell are improved.

Description

technical field [0001] The invention relates to a polysilicon etching liquid and a polysilicon etching process in a solar cell, in particular to an etching liquid and a texturing process used in the texturing process in the polysilicon solar cell manufacturing process, and belongs to the field of photovoltaic technology. Background technique [0002] As one of the new and renewable energy sources, one of the five most decisively influential technical fields in the economic outlook of the 2000s, solar power generation is environmentally friendly, energy-saving, efficient, inexhaustible, and inexhaustible. It has become the most attention-grabbing energy among new energy sources. Therefore, focusing on strengthening the research and development of photovoltaic industries such as solar cells, continuously improving photoelectric conversion efficiency, and reducing costs have become the key for enterprises to win in the fierce market competition in the future, continuously prom...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B33/10C23F1/24
Inventor 顾峰
Owner 无锡尚品太阳能电力科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products