Metallorganic chemical vapor deposition reaction chamber used for growth of oxide film

Abstract

The invention discloses a metallorganic chemical vapor deposition reaction chamber used for the growth of an oxide film, which comprises an upper flange plate (1) of the reaction chamber, a lower flange plate (2) of the reaction chamber, a reaction chamber side wall (3), a rotary shaft (4), a motor (5), a magnetofluid sealing bearing (6), a substrate support (7), a substrate heater (8), a thermocouple (9), a metal organic source air inlet (10), an oxygen source air inlet (11), a tail gas vent (12), a pressure sensor (13), a downstream pressure control valve (14) and the like. According to the reaction chamber disclosed by the invention, reaction air can be vertically transported from bottom to top so as to effectively inhibit adverse impacts on the quality of the oxide film crystal by the pre-reaction of the metal organic source and the oxygen source, and the reaction chamber is favorable for obtaining the oxide film with high quality.

Description

[0001] technical field [0002] The invention relates to the field of epitaxial growth of oxide films, in particular to metal organic chemical vapor deposition (MOCVD) equipment for growing oxide films. Background technique [0003] ZnO is a II-VI wide-bandgap compound semiconductor material with a direct bandgap. It has a similar lattice constant and bandgap width to GaN. At the same time, ZnO has many fundamental advantages over those of similar materials such as GaN. The exciton binding energy of ZnO is as high as 60 meV (GaN is about 25 meV), which is much larger than the thermal ionization energy (26 meV) at room temperature, and it is easier to achieve efficient stimulated emission at room temperature; ZnO has a lower dielectric constant and a large Electromechanical coupling coefficient; high-quality ZnO bulk single crystal is easier to obtain, the growth method is simple, and the cost is low. These excellent properties make ZnO have great application prospects in su...

AI Technical Summary

Problems solved by technology

On the one hand, because of the basic problems in ZnO materials, especially the p-type doping mechanism has not been well resolved; Strong pre-reaction, the particles generated in the gas phase will reduce the crystal quality of the film once they enter the film

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