Integrated nano microcavity current amplifier

Abstract

The invention relates to an integrated nano cavity current amplifier, belonging to current amplifiers of a new structure, and comprising a current amplifying electrode, a signal electrode, a total current electrode, an n type doped waveguide, a p type doped waveguide, an electroluminescent material and a substrate, wherein the electroluminescent material and the p type doped waveguide are integrated on the substrate; the n type doped waveguide is integrated on the p type doped waveguide structure; the top surfaces of the n type doped waveguide, the p type doped waveguide and the electroluminescent material are at the same level, and the roughness is less than 2 nanometers; the current amplifying electrode is integrated at the top of the n type doped waveguide; the signal electrode is integrated at the top of the p type doped waveguide; and the total current electrode is integrated at the top of the electroluminescent material. The current amplifier disclosed by the invention has a small size, quick reaction speed and better high frequency characteristic than that of the current commercial triode devices, can provide a current amplification effect similar to a triode, and also can be used as a nano microcavity luminescent device, so that the current amplifier has a wide application range and is not limited to the working range of the triode.

Description

technical field [0001] The invention belongs to a current amplifier with a new structure, and relates to an integrated nanometer microcavity current amplifier. Background technique [0002] In today's society, optoelectronic devices are playing an increasingly important role. People's requirements for higher computer running speed and the increasing demand for optoelectronic devices in various industries are leading to the miniaturization of optoelectronic devices and the need for good high-speed response characteristics and high-frequency characteristics. With the development and maturity of nano-fabrication technology, the miniaturization of optoelectronic devices is also developing rapidly. The size of optoelectronic devices has continued to decrease over the past few decades, and this trend will continue. [0003] Due to the reduction in device size, the theory of traditional devices is being challenged by quantum mechanics. The carrier Fermi level distribution due to...

AI Technical Summary

Problems solved by technology

[0004] In traditional optoelectronic devices, although they have good response speed and high-frequency characteristics, due to the limitation of light wavelength and the influence of diffraction effects, it is difficult to achieve sub-wavelength or even nanometer-scale device size.

Although traditional electronic devices can achieve nanometer size, but because they are too dependent on electron drift speed, the response speed and high-frequency characteristics are low, and they often face the problem of not being able to work in the high-frequency region.

Taking the field effect transistor in the usual sense as an example, in order to obtain a higher response speed, the width of the base region has to be made very narrow, but theoretically it faces quantum tunneling and base region width caused by too narrow a base region width. The influence of modulation effect

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