In-Ga-O base oxide thermoelectric ceramic material and preparation method thereof

A technology of ceramic materials and oxides, which is applied in the field of material science, can solve the problems of difficult to improve thermoelectric transmission performance and high thermal conductivity, and achieve good thermoelectric transmission performance, low sintering temperature and high electrical performance.

Inactive Publication Date: 2012-02-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[E. Guilmeau, D. Bérardan, Ch. Simon, A. Maignan, B. Raveau, D. Ovono Ovono, F. Delorme. J. Appl. Phys. 106, 053715 (2009); D. Bérardan, E. Guilmeau , A.Maignan, B.Raveau.Solid State Commun.146, 97(2008)] but In 2 o 3 The thermal conductivity of the matrix system is relatively high, and it is difficult to improve its thermoelectric transmission performance on this basis

Method used

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  • In-Ga-O base oxide thermoelectric ceramic material and preparation method thereof
  • In-Ga-O base oxide thermoelectric ceramic material and preparation method thereof
  • In-Ga-O base oxide thermoelectric ceramic material and preparation method thereof

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Embodiment 1

[0042] Example 1, Preparation of In-Ga-O-based oxide thermoelectric ceramic material

[0043] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , and put it into a ball mill tank for wet grinding at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 400 ℃ sintering in air for 2 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 20nm, and sinter the obtained particles into a block by spark plasma, and in the graphite mold The diameter is 20mm, the heating rate is controlled at 300°C / min, the temperature is 1000°C, the pressure is 50MPa, and the holding time is 5min; then annealed at 700°C for 6 hours to obtain In-Ga-O-based oxide thermoelectric ceramics ...

Embodiment 2

[0045] Example 2, Preparation of In-Ga-O-based oxide thermoelectric ceramic material

[0046] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , and put it into a ball mill jar for wet grinding at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 600 Sinter in air at ℃ for 2 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 50nm, and sinter the obtained particles into a block with spark plasma, and in the graphite mold The diameter is 20mm, the heating rate is controlled at 300°C / min, the temperature is 1100°C, the pressure is 30MPa, and the holding time is 10min; then anneal at 800°C for 2 hours to obtain In-Ga-O-based oxide thermoelectric ceramics ...

Embodiment 3

[0048] Example 3, Preparation of In-Ga-O-based oxide thermoelectric ceramic material

[0049] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , put it into a ball mill tank and wet mill at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 500°C Sinter in the air for 6 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 50nm, and sinter the obtained particles into a block by spark plasma, and carry out the process in a graphite mold. , the mold diameter is 20mm, the heating rate is controlled at 250°C / min, the temperature is 900°C, the pressure is 60MPa, and the holding time is 4min; then annealed at 700°C for 2 hours to obtain In-Ga-O-based oxide ther...

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Abstract

The invention discloses an In-Ga-O base oxide thermoelectric ceramic material and a preparation method thereof. The preparation method comprises steps of: (1) sintering a mixture of Ga2O3 and In2O3 to obtain a precursor powder, wherein a molar ratio of Ga2O3 to In2O3 equals to a molar ratio of Ga to In in Ga1-xIn1+x (0.05<=x<=0.95); (2) carrying out discharge plasma sintering on the precursor powder and annealing to obtain the In-Ga-O base oxide thermoelectric ceramic material. Compared with an ordinary solid sintering, the method provided by the invention has advantages of short reaction time, low sintering temperature, controllable material crystal grain size and capability of synthesizing series of ceramic samples of different sizes.

Description

technical field [0001] The invention relates to an In-Ga-O-based oxide thermoelectric ceramic material and a preparation method thereof, belonging to the technical field of material science. Background technique [0002] Thermoelectric materials are functional materials that can directly convert heat and electricity into each other. A thermoelectric device made of a thermoelectric material can output electric energy through the Seebeck effect under the condition of a temperature gradient, which is called a thermoelectric battery; on the other hand, a thermoelectric device can also generate electricity through the Peltier effect A temperature difference is generated to achieve the effect of electronic refrigeration. Thermoelectric conversion has the characteristics of small device size, high reliability, no emission of pollutants, and wide application temperature range. It is an environmentally friendly energy conversion technology. With the development of material science ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/626C04B35/64
Inventor 林元华刘勇兰金叻成波刘大博南策文
Owner TSINGHUA UNIV
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