In-Ga-O base oxide thermoelectric ceramic material and preparation method thereof
A technology of ceramic materials and oxides, which is applied in the field of material science, can solve the problems of difficult to improve thermoelectric transmission performance and high thermal conductivity, and achieve good thermoelectric transmission performance, low sintering temperature and high electrical performance.
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Embodiment 1
[0042] Example 1, Preparation of In-Ga-O-based oxide thermoelectric ceramic material
[0043] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , and put it into a ball mill tank for wet grinding at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 400 ℃ sintering in air for 2 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 20nm, and sinter the obtained particles into a block by spark plasma, and in the graphite mold The diameter is 20mm, the heating rate is controlled at 300°C / min, the temperature is 1000°C, the pressure is 50MPa, and the holding time is 5min; then annealed at 700°C for 6 hours to obtain In-Ga-O-based oxide thermoelectric ceramics ...
Embodiment 2
[0045] Example 2, Preparation of In-Ga-O-based oxide thermoelectric ceramic material
[0046] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , and put it into a ball mill jar for wet grinding at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 600 Sinter in air at ℃ for 2 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 50nm, and sinter the obtained particles into a block with spark plasma, and in the graphite mold The diameter is 20mm, the heating rate is controlled at 300°C / min, the temperature is 1100°C, the pressure is 30MPa, and the holding time is 10min; then anneal at 800°C for 2 hours to obtain In-Ga-O-based oxide thermoelectric ceramics ...
Embodiment 3
[0048] Example 3, Preparation of In-Ga-O-based oxide thermoelectric ceramic material
[0049] According to Ga 0.6 In 1.4 o 3 The elemental ratio of Ga and In in medium, weigh high-purity (99.99%) Ga 2 o 3 and In 2 o 3 , put it into a ball mill tank and wet mill at a rate of 250rpm for 12 hours; then take out the powder and dry it in a drying oven at a temperature of 70°C for 12 hours; through the pre-sintering process, place the dried powder at 500°C Sinter in the air for 6 hours to obtain the precursor powder, and complete the phase formation stage of the material phase; then, through granulation, obtain particles with a particle size of 50nm, and sinter the obtained particles into a block by spark plasma, and carry out the process in a graphite mold. , the mold diameter is 20mm, the heating rate is controlled at 250°C / min, the temperature is 900°C, the pressure is 60MPa, and the holding time is 4min; then annealed at 700°C for 2 hours to obtain In-Ga-O-based oxide ther...
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