49results about How to "Improve electrical transmission performance" patented technology

In a composite multiplexer circuit designed to multiplex plural frequency bands by interconnecting plural multiplexer circuits in parallel, a multiplexer circuit for extracting a frequency band of a GPS reception system includes a matching network including an inductor and a capacitor, and a surface acoustic wave filter connected in series with the matching network. The multiplexer circuit for the GPS reception system can be so set as to have infinite impedances at the other frequency bands than the frequency band thereof. This prevents signals in the other frequency bands from leaking into the multiplexer circuit for the GPS reception system.

A connecting device for solar panel includes an enclosure; a plurality of connecting units arranged in the enclosure and each having a sleeve portion and an angled portion with clamping elements arranged on the angled portion; a plurality of holding-down members each having a curved pressing portion downward extending through an engaging hole to abut against an inner surface of the sleeve portion, and two wing portions outward extended from middle sections of two straight edges of the curved pressing portion for resting on an outer surface of the sleeve portion along the engaging hole; and a plurality of connectors provided on one side of the enclosure to connect to the clamping elements of the connecting units. Conductors extended from solar panels can be firmly clamped between the curved pressing portion and the inner surface of the sleeve portion to ensure good electric transmission performance of the connecting device.

A connecting device for electrically connecting two circuit boards is provided. The connecting device has a first and a second coaxial connector and a coupling member. The two coaxial connectors and the coupling member each have an outer conductor and an inner conductor. The outer conductors of the coaxial connectors are electrically interconnected via the outer conductor of the coupling member and the inner conductors of the coaxial connectors are electrically interconnected via the inner conductor of the coupling member. The coupling member is arranged between the two coaxial connectors so as to be tiltable from an axially aligned orientation and displaceable in an axial direction. The coupling member is held on an elastically deformable dielectric holding ring which surrounds the coupling member in a circumferential direction and is in contact against at least one coaxial connector.

A substrate having a metallic panel and an insulator is provided. The metallic panel comprises two patterned metallic layers. The two patterned metallic layers are disposed on the respective sides of the metallic panel and connected with each other. The metallic panel has an upper surface and a lower surface. The heat dissipating pathway between the upper and the lower surface is constructed using a metal. The insulator is positioned in the gaps between the patterned metallic layers.

The invention relates to a method for improving thermoelectric properties of bismuth sulfide polycrystal and belongs to the technical field of energy materials. The method is characterized by comprising the following steps of: mixing bismuth sulfide nano powder prepared by a mechanical alloying method with (001)-oriented monocrystal bismuth sulfide nanorod powder synthesized by a hydrothermal method, ultrasonically dispersing in absolute ethanol for 10-200 minutes, drying and then manually grinding in an agate mortar for 10-100 minutes; and placing ground powder in a graphite mold, sintering at 300-500 DEG C by adopting a spark plasma sintering process, and maintaining the temperature for 0-30 minutes to prepare a bismuth sulfide polycrystal block. Because the spark plasma sintering process has high heating rate, thus the growth and fusion of crystals are inhibited, the monocrystal nanorod structure is retained in the polycrystal block to form a fast channel for carrier migration, and the electric transmission performance and thermoelectric property of the bismuth sulfide polycrystal are greatly improved; and the method has the advantages of simplicity in required equipment, easiness in operation, low cost, significant effect and the like.

The invention discloses a method for manufacturing carbon nano tube flexible micro-bumps in microelectronic packaging. According to the method for manufacturing the carbon nano tube flexible micro-bumps, carbon nano tube bundles growing on other substrates are compacted and are transplanted to a semiconductor substrate in a low-temperature transfer manner to obtain flexible micro-bumps. The carbon nano tube bundles have certain elasticity and flexibility, so that the problem of failure caused by thermal stress in interconnection can be solved to a certain extent by manufacturing the flexible micro-bumps through the carbon nano tube bundles. Meanwhile, a carbon nano tube is excellent in electrical performance such as ultrahigh electrical conductivity and current density of over 10<9>A/cm<2>. Therefore, by using the carbon nano tube as micro-bumps, good electrical transmission performance is realized, and the problem of electrical migration of metal bumps can be solved. The method is easy to operate and compatible with a semiconductor process.

The invention discloses a Cu1.8S-based polycrystalline block thermoelectric material and a preparation method thereof. The thermoelectric material is prepared from raw materials including Cu1.8S and adoping agent X2Y3, wherein the mol ratio of the Cu1.8S to the doping agent X2Y3 is 1 to (0.005 to 0.07). The thermoelectric material prepared by the preparation method has the advantages that on onehand, In is doped, electrons are introduced and the concentration of current carriers is optimized; point defects are introduced and scattering of short-wavelength phonons is remarkably enhanced, so that the high-temperature thermal conductivity is reduced; on the other hand, surplus In2S3 forms a special nano-structure, i.e., the surplus In2S3 is attached to the edge of an air hole; the thermal conductivity of the material can be greatly reduced by the structure and the thermoelectric performance of a Cu1.8S material is optimized. The preparation method of the Cu1.8S-based polycrystalline block thermoelectric material, disclosed by the invention, has the advantages of low cost of needed raw materials, simple equipment, easiness for operation and remarkable effect.

The invention belongs to the technical field of solar cells, and relates to a two-dimensional silicon-based micro-nano photonic crystal solar cell. The two-dimensional silicon-based micro-nano photonic crystal solar cell is characterized in that front electrodes which are periodically arrayed are arranged on the lower side surface of a front contact layer; a two-dimensional silicon-based micro-nano photonic crystal solar cell structure is arranged between the front electrodes and back electrodes, upper layers of the two-dimensional silicon-based micro-nano photonic crystal solar cell structure are type-n silicon semiconductor layers, a lower layer of the two-dimensional silicon-based micro-nano photonic crystal solar cell structure is a type-p silicon semiconductor layer, and PN junctions are formed by the type-n silicon semiconductor layers and the type-p silicon semiconductor layer; a back contact layer is arranged at the bottoms of the back electrodes, and the back contact layer and the front contact layer are made of identical materials; the back electrodes which are of aluminum thin layer structures are arranged in slow-light regions or band-gap regions of the type-p silicon semiconductor layer. The two-dimensional silicon-based micro-nano photonic crystal solar cell has the advantages that the two-dimensional silicon-based micro-nano photonic crystal solar cell is simple in structure, small in size, low in threshold, short in carrier diffusion distance and high in stability, light coupling efficiency and light transmission efficiency, is far thinner than the traditional silicon solar cell and becomes a new-generation low-cost and efficient solar cell device with the maximum potential, and mature processing and composite technologies are implemented.

The invention discloses a preparation method for three-dimensional graphene. The method comprises the following steps: with tryptophan as a carbon source, carrying out heating to a specified temperature and carrying out heat preservation for a certain time under the protection of inert gas so as to prepare freestanding three-dimensional graphene. The preparation method for the three-dimensional graphene provided by the invention uses the tryptophan as the carbon source and introduces nitrogen-atom-doped graphene, so electricity transmission performance is significantly improved; meanwhile, the preparation method does not need assist of other foaming agents and has better self-foaming effects, so the process is simple.

This invention relates to a method for preparing doped Ti-Co-Sb thermoelectric composites. The general chemical formula of doped Ti-Co-Sb thermoelectric composites is Ti1+xCoy(Me)1-ySbz(Me')1-z, where, x is 0.05-0.20; y is 0.80-1.0; z is 0.85-1.0; Me is one of Ni, Fe, Pd and Pt; Me' is one of Sn, Te and Ge. The method comprises: mixing the raw materials according to the formula, pressing into lamellae, and smelting to obtain TiO2 nanoparticles. The doped Ti-Co-Sb thermoelectric composites have high electrical conductivity, low lattice heat conductivity, and high thermoelectric performance.

An elemental tellurium-based composite thermoelectric material belongs to the field of thermoelectric materials, and is characterized in that the chemical formula of the thermoelectric material is Te<1-x>(Sb2Se3)x, wherein x is greater than or equal to 0 and less than or equal to 0.2. The preparation method comprises the following steps: weighing the raw material components according to the molarfraction of the chemical formula, and packaging a Te block, Sb powder and Se powder in a carbon-plated quartz tube in vacuum; putting the quartz tube into a vertical tube furnace for smelting; performing annealing treatment; and finally, grounding the obtained cast ingot into fine powder, and conducting spark plasma sintering to form a compact block, wherein the compact block has very low heat conductivity and high thermoelectric performance, and the thermoelectric figure of merit reaches 0.95. The thermoelectric performance of the elemental tellurium-based composite thermoelectric material isimproved through a smelting process, an annealing process and a spark plasma sintering process. Compared with the prior art, the antimony selenide component is introduced, so that the carrier concentration and the lattice thermal conductivity are synergistically optimized, the technological process is simple and controllable, and the cost is low.

The invention discloses a coaxial connector which comprises a metal casing, an insulating base and a terminal; the metal casing comprises a cylindrical part and a clamping part which are connected by a connecting part, and an accommodating space is formed in the cylindrical part; the insulating base comprises a main body as well as a ring wall and a pressing plate which are arranged on two sides of the main body respectively, and is placed in the accommodating space in the metal casing; the terminal comprises a plate body and at least one contact arm and is accommodated in the main body of the insulating base; and a metal layer is respectively arranged on each of the inner lateral surface of the pressing plate of the insulating base and the inner lateral surface, corresponding to the pressing plate, of the main body. The coaxial connector not only increases the electrical contact area between coaxial cables but also improves the assembly strength of the coaxial cables.

The invention relates to the field of thermoelectric materials, in particular to an N-type SnS single-crystal thermoelectric material and a preparation method thereof. The preparation method providedby the invention comprises the steps: providing more additional electrons by replacing a part of S position with Br to improve the N-type carrier concentration of the SnS single-crystal thermoelectricmaterial, thereby improving the electric transmission performance and thermoelectric conversion efficiency of the material; synthesizing single crystals SnS by directional solidification, so the crystal size can be effectively controlled, the crystal growth period is short, the success rate is high, and the thermoelectric transmission performance of the thermoelectric material can be effectivelyimproved; synthesizing olycrystalline SnS through mechanical alloying before directional solidification, thereby solving the problem that a test tube is prone to bursting due to the fact that the vapor pressure of S is too large at high temperature. According to the record of the embodiment, the SnS material provided by the invention is N-type SnS and has better thermoelectric performance.

The invention discloses an Al-doped Cu-deficient BiCuSeO-based thermoelectric material and a preparation method thereof. The method comprises a step of compounding Bi, Cu, Bi2O3, Se, Al and Al2O3 powders in the weight ratio of Bi:Cu:Bi2O3:Se:Al:Al2O3=(1-x)/3:1-x:(1-x)/3:1:x/3, wherein x is larger than or equal to 0.025 and is smaller than or equal to 0.125, a step of mixing components uniformly toobtain a mixed powder, a step of milling the mixed powder, grinding the mixed powder with an agate mortar, and placing the powder in a drying box for drying to obtain a dry powder, a step of sealingthe dry powder in a vacuum quartz tube, then placing the vacuum quartz tube into a muffle furnace for high-temperature solid phase reaction, breaking the vacuum quartz tube to take a sample powder outafter a sample is cooled with the furnace, grinding the sample powder with the agate mortar, loading the grinded powder into a graphite mold, and placing the graphite mold into a hot-pressing sintering furnace for sintering, and a step of cooling after the sintering, and releasing the mold to obtain the Al-doped Cu-deficient BiCuSeO-based thermoelectric material. The prepared Al-doped Cu-deficient BiCuSeO-based thermoelectric material has the advantages of high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and highdimensionless thermoelectric figure ZT.

The invention discloses a method for optimizing the performance of a bismuth sulfide polycrystal thermoelectric material, and belongs to the technical field of energy materials. The method comprises the steps that bismuth sulfide powder synthesized through a mechanical alloying method or a solid phase method is adopted as precursor powder; a hydrothermal method is adopted, ethylene glycol is adopted as a solvent, hydrazine hydrate is adopted as a reducing agent, mixed bases of NaOH and KOH are adopted as a pH modifier, a hydrothermal reaction is performed under the temperature of 100-200 DEG C for 1-6 h, and bismuth sulfide/bismuth core-shell structure powder with the controllable surface bismuth layer thickness is obtained. The core-shell structure powder of different bismuth layer thicknesses is placed into a graphite mold, and a spark plasma sintering technology is adopted for performing sintering for 0-30 min under the temperature of 300-500 DEG C to prepare a bismuth sulfide polycrystal block. Equipment needed by the method is simple, and the method is easy to implement, low in cost and capable of greatly improving the electrical transmission performance of the bismuth sulfide polycrystal.