N-type SnS single crystal thermoelectric material and preparation method thereof

A technology of thermoelectric materials and single crystals, which is applied in the direction of thermoelectric device node lead-out materials, polycrystalline material growth, and thermoelectric device manufacturing/processing. It can solve problems that cannot be directly used, and achieve high success rate and crystal growth cycle Short, effect of improving thermoelectric transfer performance

Active Publication Date: 2020-07-14
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the high vapor pressure and active nature of S, the synthesis method suitable for single crystal SnSe cannot be directly applied to SnS

Method used

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  • N-type SnS single crystal thermoelectric material and preparation method thereof
  • N-type SnS single crystal thermoelectric material and preparation method thereof
  • N-type SnS single crystal thermoelectric material and preparation method thereof

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preparation example Construction

[0037] The invention provides a method for preparing an N-type SnS single crystal thermoelectric material, comprising the following steps:

[0038] Sn powder, S powder and SnBr 2 Powder mixing and ball milling to obtain polymorphic SnS powder;

[0039] The polycrystalline SnS powder is directional solidified to obtain an N-type SnS single crystal thermoelectric material.

[0040] In the present invention, unless otherwise specified, all raw materials are commercially available products well known to those skilled in the art.

[0041] The present invention combines Sn powder, S powder and SnBr 2 The powders were mixed and ball milled to obtain polymorphic SnS powder. In the present invention, the Sn powder, S powder and SnBr 2 The purity of the powder is independently preferably ≧99.99% by weight. In the present invention, the Sn powder, S powder and SnBr 2 The powder is preferably mixed according to the molar ratio of Sn, S and Br being 1:(1-x):x; the value range of x is...

Embodiment 1

[0067] According to the molar ratio of Sn, S and Br being 1:0.99:0.01, Sn powder, S powder and SnBr with a purity greater than 99.99% 2 Powder is mixed, obtains the mixed material of 15g;

[0068] Put 15g of the mixed material and 400g of balls into a ball milling tank, and in a nitrogen atmosphere, first ball mill at a speed of 150rpm for 1 hour, then ball mill at a speed of 425rpm for 30 hours, and sieve through 100 meshes to obtain polymorphic SnS powder;

[0069] Put the polymorphic SnS powder into the inner layer quartz tube (diameter is 12mm, the bottom is conical, angle 42 °), vacuumize until the degree of vacuum is less than 10 -3 Pa, sealing the inner quartz tube with flame;

[0070] Place the inner quartz tube sealed with flame in the outer quartz tube (20mm in diameter, with a flat bottom), and evacuate until the vacuum degree is less than 10 -3 Pa, sealing the outer layer quartz tube with a flame to obtain a double-layer quartz tube;

[0071] The double-layer qu...

Embodiment 2

[0078] According to the molar ratio of Sn, S and Br is 1:0.98:0.02, Sn powder, S powder and SnBr with a purity greater than 99.99% 2 Powder is mixed, obtains the mixed material of 15g;

[0079] Put 15g of the mixed material and 400g of balls into a ball milling tank, and in a nitrogen atmosphere, first ball mill at a speed of 150rpm for 1 hour, then ball mill at a speed of 425rpm for 30 hours, and sieve through 100 meshes to obtain polymorphic SnS powder;

[0080] Put the polymorphic SnS powder into the inner layer quartz tube (diameter is 15mm, the bottom is conical, and the angle is 40 °), vacuumize until the degree of vacuum is less than 10° -3 Pa, flame sealing said bottom is a conical quartz tube;

[0081] Place the inner quartz tube sealed with flame in the outer quartz tube (diameter 18mm, flat bottom), and evacuate until the vacuum degree is less than 10 -3 Pa, sealing the outer layer quartz tube with a flame to obtain a double-layer quartz tube;

[0082] The double...

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Abstract

The invention relates to the field of thermoelectric materials, in particular to an N-type SnS single-crystal thermoelectric material and a preparation method thereof. The preparation method providedby the invention comprises the steps: providing more additional electrons by replacing a part of S position with Br to improve the N-type carrier concentration of the SnS single-crystal thermoelectricmaterial, thereby improving the electric transmission performance and thermoelectric conversion efficiency of the material; synthesizing single crystals SnS by directional solidification, so the crystal size can be effectively controlled, the crystal growth period is short, the success rate is high, and the thermoelectric transmission performance of the thermoelectric material can be effectivelyimproved; synthesizing olycrystalline SnS through mechanical alloying before directional solidification, thereby solving the problem that a test tube is prone to bursting due to the fact that the vapor pressure of S is too large at high temperature. According to the record of the embodiment, the SnS material provided by the invention is N-type SnS and has better thermoelectric performance.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to an N-type SnS single crystal thermoelectric material and a preparation method thereof. Background technique [0002] With the depletion of fossil energy sources, it is particularly urgent to find new alternative energy sources. Thermoelectric material is a kind of material that can directly convert heat energy and electric energy. It has the advantages of safety, reliability, and no pollution to the environment. It is the focus of research in the field of energy and environment. In recent years, new high-performance thermoelectric materials represented by single crystal SnSe have attracted extensive attention. As an analog of SnSe, SnS has a similar crystal structure and thermoelectric transport mechanism to SnSe, and the cost of S is lower than that of Se. Therefore, it is of great significance to develop high-performance SnS thermoelectric materials. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16C30B11/02C30B29/46
CPCC30B29/46C30B11/02H10N10/852H10N10/01
Inventor 赵立东胡学高
Owner BEIHANG UNIV
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