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Preparation method of bismuth sulfide polycrystal thermoelectric material

A thermoelectric material and bismuth sulfide technology, which is applied in the field of preparation of bismuth sulfide polycrystalline thermoelectric materials, can solve the problems of low electrical conductivity and low ZT value of materials, achieve simple equipment, inhibit grain growth and fusion, and improve electrical transmission performance. Effect

Inactive Publication Date: 2017-01-04
KUNMING UNIV OF SCI & TECH
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  • Description
  • Claims
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Problems solved by technology

Bi 2 S 3 As a thermoelectric material, the synthesis process is simple, the raw material is abundant, cheap, and low-toxicity has broad application prospects, but its ZT value still has a lot of room for improvement.
And Bi 2 S 3 The main problem of the low ZT value of the material is the low electrical conductivity

Method used

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  • Preparation method of bismuth sulfide polycrystal thermoelectric material
  • Preparation method of bismuth sulfide polycrystal thermoelectric material

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited to the content described.

[0018] A preparation method of bismuth sulfide polycrystalline thermoelectric material, specifically comprising the following steps:

[0019] (1) Prepare bismuth sulfide powder with an average particle size of 5-500nm. In the embodiment of the present invention, bismuth sulfide powder is prepared by mechanical alloying method or bismuth sulfide block synthesized by solid phase method, and the bismuth sulfide block is ground and sieving to obtain bismuth sulfide powder.

[0020] (2) Using the bismuth sulfide powder prepared in step (1) as the precursor powder, the bismuth sulfide / bismuth core-shell powder was prepared by hydrothermal method: ethylene glycol was used as solvent, hydrazine hydrate was used as reducing agent, NaOH and The mixed bas...

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Abstract

The invention discloses a method for optimizing the performance of a bismuth sulfide polycrystal thermoelectric material, and belongs to the technical field of energy materials. The method comprises the steps that bismuth sulfide powder synthesized through a mechanical alloying method or a solid phase method is adopted as precursor powder; a hydrothermal method is adopted, ethylene glycol is adopted as a solvent, hydrazine hydrate is adopted as a reducing agent, mixed bases of NaOH and KOH are adopted as a pH modifier, a hydrothermal reaction is performed under the temperature of 100-200 DEG C for 1-6 h, and bismuth sulfide / bismuth core-shell structure powder with the controllable surface bismuth layer thickness is obtained. The core-shell structure powder of different bismuth layer thicknesses is placed into a graphite mold, and a spark plasma sintering technology is adopted for performing sintering for 0-30 min under the temperature of 300-500 DEG C to prepare a bismuth sulfide polycrystal block. Equipment needed by the method is simple, and the method is easy to implement, low in cost and capable of greatly improving the electrical transmission performance of the bismuth sulfide polycrystal.

Description

technical field [0001] The invention relates to a preparation method of a bismuth sulfide polycrystalline thermoelectric material, belonging to the technical field of energy materials. Background technique [0002] With the continuous development of social economy, environmental and energy issues are paid more and more attention by human beings. Thermoelectric materials can directly realize the mutual conversion of heat energy and electric energy. Thermoelectric devices are non-polluting, light in structure, small in size and long in life, and are increasingly concerned by people. Thermoelectric modules with thermoelectric devices as core components have broad application prospects in semiconductor refrigeration and thermoelectric batteries. The thermoelectric performance is characterized by the dimensionless thermoelectric figure of merit ZT, ZT=TS 2 σ / κ, S is Seebeck coefficient, σ is electrical conductivity, κ is thermal conductivity, T is absolute temperature; S 2 σ i...

Claims

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Application Information

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IPC IPC(8): C04B35/547C04B35/645
CPCC04B35/547C04B35/645C04B2235/666C04B2235/96
Inventor 葛振华冯晶秦鹏
Owner KUNMING UNIV OF SCI & TECH
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