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Al-doped Cu-deficient BiCuSeO-based thermoelectric material and preparation method thereof

A technology of thermoelectric materials and vacancy, which is applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of low conductivity, low ZT value, limited application, etc., and achieve high ZT and power factor High, easy industrial production effect

Active Publication Date: 2019-08-09
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the extremely low conductivity leads to a low ZT value, which limits its application in the field of thermoelectric materials.

Method used

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  • Al-doped Cu-deficient BiCuSeO-based thermoelectric material and preparation method thereof
  • Al-doped Cu-deficient BiCuSeO-based thermoelectric material and preparation method thereof
  • Al-doped Cu-deficient BiCuSeO-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for preparing an Al-doped Cu-deficient BiCuSeO-based thermoelectric material, comprising the steps of:

[0035] (1) Using Bi, Cu, Bi 2 o 3 , Se, Al, Al 2 o 3Powder as raw material, according to Bi:Cu:Bi 2 o 3 :Se:Al:Al 2 o 3 =(1-x) / 3:1-x:(1-x) / 3:1:x / 3:x / 3 The ratio batching of substance amount, x=0.025; Each component is mixed homogeneously, gets mixed powder;

[0036] (2) Pour the mixed powder into the ball mill, according to the ball-to-material ratio of 10:1, ball mill at a speed of 500r / min under the protection of argon for 5h, and the powder obtained by ball milling is then ground for 45min with an agate mortar, and then placed in vacuum drying Dry in the box, and dry at a temperature of 70°C for 8 hours to obtain a dry powder;

[0037] (3) Seal the dry powder into a vacuum quartz tube, then place it in a muffle furnace for high-temperature solid-state reaction, heat it to 350°C at a heating rate of 5°C / min, keep it warm for 8 hours, and then rais...

Embodiment 2

[0042] A method for preparing an Al-doped Cu-deficient BiCuSeO-based thermoelectric material, comprising the steps of:

[0043] (1) Using Bi, Cu, Bi 2 o 3 , Se, Al, Al 2 o 3 Powder as raw material, according to Bi:Cu:Bi 2 o 3 :Se:Al:Al 2 o 3 =(1-x) / 3:1-x:(1-x) / 3:1:x / 3:x / 3 The ratio batching of substance amount, x=0.05; Each component is mixed uniformly, obtains mixed powder;

[0044] (2) Pour the mixed powder into a ball mill, according to the ball-to-material ratio of 15:1, ball mill for 6 hours at a speed of 300r / min under the protection of argon, and then grind the powder obtained by ball milling with an agate mortar for 60 minutes, and then place it in vacuum drying Dry in the box, and dry at a temperature of 60°C for 10 hours to obtain a dry powder;

[0045] (3) Seal the dry powder into a vacuum quartz tube, then place it in a muffle furnace for high-temperature solid-state reaction, heat it to 300°C at a heating rate of 5°C / min, keep it warm for 10 hours, and th...

Embodiment 3

[0050] A method for preparing an Al-doped Cu-deficient BiCuSeO-based thermoelectric material, comprising the steps of:

[0051] (1) Using Bi, Cu, Bi 2 o 3 , Se, Al, Al 2 o 3 Powder as raw material, according to Bi:Cu:Bi 2 o 3 :Se:Al:Al 2 o 3 =(1-x) / 3:1-x:(1-x) / 3:1:x / 3:x / 3 The ratio batching of substance amount, x=0.075; Each component is mixed homogeneously, gets mixed powder;

[0052] (2) Pour the mixed powder into a ball mill, according to the ball-to-material ratio of 20:1, ball mill for 5 hours at a rotational speed of 500r / min under the protection of argon, and then grind the powder obtained by ball milling with an agate mortar for 30 minutes, and then place it in vacuum drying Dry in the box, and dry at a temperature of 50°C for 12 hours to obtain a dry powder;

[0053] (3) Seal the dry powder into a vacuum quartz tube, then place it in a muffle furnace for high-temperature solid-state reaction, heat it to 350°C at a heating rate of 5°C / min, keep it warm for 8 h...

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Abstract

The invention discloses an Al-doped Cu-deficient BiCuSeO-based thermoelectric material and a preparation method thereof. The method comprises a step of compounding Bi, Cu, Bi2O3, Se, Al and Al2O3 powders in the weight ratio of Bi:Cu:Bi2O3:Se:Al:Al2O3=(1-x) / 3:1-x:(1-x) / 3:1:x / 3, wherein x is larger than or equal to 0.025 and is smaller than or equal to 0.125, a step of mixing components uniformly toobtain a mixed powder, a step of milling the mixed powder, grinding the mixed powder with an agate mortar, and placing the powder in a drying box for drying to obtain a dry powder, a step of sealingthe dry powder in a vacuum quartz tube, then placing the vacuum quartz tube into a muffle furnace for high-temperature solid phase reaction, breaking the vacuum quartz tube to take a sample powder outafter a sample is cooled with the furnace, grinding the sample powder with the agate mortar, loading the grinded powder into a graphite mold, and placing the graphite mold into a hot-pressing sintering furnace for sintering, and a step of cooling after the sintering, and releasing the mold to obtain the Al-doped Cu-deficient BiCuSeO-based thermoelectric material. The prepared Al-doped Cu-deficient BiCuSeO-based thermoelectric material has the advantages of high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and highdimensionless thermoelectric figure ZT.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, in particular to an Al-doped Cu-deficient BiCuSeO-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric material, also known as thermoelectric material, is a new type of functional material that uses the Seebeck effect to convert thermal energy into electrical energy, and its reverse reaction Peltier effect to directly cool or heat electrical energy. Using these characteristics of thermoelectric materials, It is used in thermoelectric power generation and semiconductor refrigeration. It can be made into a thermoelectric generator or used in reverse as a refrigeration device. These thermoelectric devices have the advantages of light structure, small footprint, long service life, environmental protection, and suitable for harsh environments. They are not only for the manufacturers of green products It provides the development dire...

Claims

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Application Information

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IPC IPC(8): H01L35/18H01L35/34
CPCH10N10/853H10N10/01
Inventor 李安敏徐飞程晓鹏蒙天力陈翠亭
Owner GUANGXI UNIV
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