Temperature grading and screening platform and method for semiconductor lasers

Abstract

The invention discloses a temperature grading and screening platform and a method for semiconductor lasers. The platform comprises a microprocessor, a programmable current source chip, a temperature tank and the semiconductor lasers positioned in the temperature tank; and each of the semiconductor lasers is provided with a photodiode, and a grounding resistor is further serially connected betweenthe anode of the photodiode and the cathode of the semiconductor laser, wherein the microprocessor is connected with the programmable current source chip through a bus, and the cathodes and the anodes of the photodiodes are respectively connected with the I / O (Input / Output) port of the programmable current source chip and an analog-to-digital converter of the microprocessor. In the method, the relationship between the photodiodes and the semiconductor lasers is utilized, and the parameters of the photodiodes are tested, thus the aim of screening the semiconductor lasers is achieved. With the adoption of the temperature grading and screening platform and the method for the semiconductor lasers disclosed by the invention, the grading and the screening can be carried out in a large batch prior to forming optical modules, the screening method is simple and is low in cost, and the support of a large amount of professional optical instruments and electronic test equipment is not needed, thus the temperature grading and screening platform and the method for the semiconductor lasers are easy to popularize.

Description

technical field [0001] The invention relates to a screening platform and a screening method thereof, in particular to a platform and a method for temperature graded screening of semiconductor lasers. Background technique [0002] Under the guidance of the big policy of optical input and copper retreat, the demand for optical modules is increasing, but individual special applications require optical modules with specified industrial-grade temperatures (ambient temperature between 40°C and 85°C). Module manufacturers are required to provide modules of this temperature level, and to meet this requirement, optical devices must be screened. The existing screening methods are mainly the following two: [0003] 1. Package the semiconductor laser into an optical device, then assemble it into an optical module, carry out normal temperature debugging, and then perform high and low temperature screening on each module, especially at high temperature. Due to the high temperature environ...

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Problems solved by technology

[0003] 1. Package the semiconductor laser into an optical device, then assemble it into an optical module, carry out normal temperature debugging, and then perform high and low temperature screening on each module, especially at high temperature. Due to the high temperature environment, the performance of the semiconductor laser drops sharply, so in order To ensure the normal operation of the optical module, high-temperature screening is a must for industrial-grade optical modules, but since the product has been assembled into an optical module, if it fails to pass the screening and has no other special needs, it will only be scrapped or downgraded, which is very wasteful

[0004] 2. Chip manufacturers screen semiconductor lasers according to their needs. The screening of these manufacturers requires the support of professional optical instruments and electronic testing instruments. The screening cost is very high. After the screening is completed, the cost used will be passed on to the downstream optical modules. Manufacturers, causing the cost of the industrial chain to remain high

[0005] In order to ensure normal application, a general semiconductor laser will fix a photodiode near it for power monitoring. The high and low temperature photoresponsivity of this type of photodiode does not change much, and it responds linearly in the normal working range of the semiconductor laser. It is used for optical modules. The closed-loop control of the optical power and the monitoring of the luminous power of the semiconductor laser can effectively reflect the luminous power of the semiconductor laser, but the difference in its fixed position leads to a difference in the responsivity of each photodiode

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