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Imaging substrate and preparation method thereof as well as light-emitting diode

A patterned substrate, sapphire substrate technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of complex manufacturing process, high production cost, expensive batch sapphire substrate, etc., to reduce production cost, improve manufacturing process simple effect

Inactive Publication Date: 2012-03-21
XUZHOU GAPSS OE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

Nanostructures in the prior art are generally prepared on sapphire substrates, the manufacturing process is relatively complicated, and expensive sapphire substrates are required in batches, resulting in high production costs

Method used

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  • Imaging substrate and preparation method thereof as well as light-emitting diode
  • Imaging substrate and preparation method thereof as well as light-emitting diode
  • Imaging substrate and preparation method thereof as well as light-emitting diode

Examples

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preparation example Construction

[0043] figure 2 It is a schematic flow chart of a method for preparing a patterned substrate according to an embodiment of the present invention, such as figure 2 As shown, this embodiment includes:

[0044] Step 201: providing a metal aluminum substrate;

[0045] Step 202: anodizing the metal aluminum substrate into alumina with a uniform porous structure on the surface;

[0046] Step 203: removing residual metallic aluminum on the alumina;

[0047] Step 204: Transforming alumina into a sapphire substrate with a uniform porous structure on the surface.

[0048] The preparation method of the patterned substrate according to the embodiment of the present invention first anodizes the metal aluminum substrate into alumina with a uniform porous structure on the surface, and then directly converts the aluminum oxide into a sapphire substrate with a uniform porous structure on the surface, thereby obtaining Patterned substrate, simple manufacturing process. Moreover, in the p...

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Abstract

The invention provides an imaging substrate and a preparation method thereof as well as a light-emitting diode, which belong to the field of light-emitting diode, wherein the preparation method of the imaging substrate comprises the following steps of: providing an aluminum base; oxidizing anode of the aluminum base into aluminum oxide with uniform porous structure on the surface; removing the rest aluminum on the aluminum oxide; and converting the aluminum oxide into a sapphire substrate with uniform porous structure on the surface. The embodiment of the invention has simple manufacturing technology and can reduce production cost of the light-emitting diode.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a patterned substrate, a preparation method thereof, and a light-emitting diode. Background technique [0002] In the prior art, light emitting diodes (LEDs, light emitting diodes) have been applied in lighting systems. However, due to its low IQE (internal quantum efficiency, internal quantum efficiency) and high cost / low lumen, light-emitting diodes cannot be widely used at present. [0003] The prior art adopts many ways to try to improve the IQE of light-emitting diodes and reduce the cost of light-emitting diodes / improve the lumen of light-emitting diodes, such as increasing the EQE (external quantum efficiency, external quantum efficiency) of light-emitting diodes. The specific implementation methods include PSS (patterned sapphire substrate, patterned sapphire substrate) technology. [0004] The patterned sapphire substrate is designed and produced on the sapphire su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/20H01L33/22
Inventor 高成
Owner XUZHOU GAPSS OE TECH
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