Air leakage detecting method for reaction cavity and control method for vacuum reactor

Abstract

The invention discloses an air leakage detecting method for a reaction cavity and a control method for a vacuum reactor, which can realize accurate air leakage condition detection of the reaction cavity of the vacuum reactor in real time while the capacity is unaffected by detection steps. The air leakage detecting method includes steps of processing a substrate to be processed in the reaction cavity, removing the substrate to be processed and proceeding to a cleaning procedure, igniting plasmas by feeding oxygen in the cleaning procedure, and analyzing whether a spectrum generated by the oxygen plasmas contains a frequency spectrum representing nitrogen or not by the aid of an optical observation device. The reaction cavity leaks if the intensity of the spectrum representing nitrogen is larger than the set value, and the vacuum reactor needs to be stopped operating. A next processing procedure can be performed if the detection shows that the spectrum representing nitrogen is not larger than the set value. Air leakage can be detected in real time by the air leakage detecting method by the aid of existing processing procedures and equipment, and thereby capacity is guaranteed.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a gas leakage detection method for plasma processing equipment. Background technique [0002] Modern semiconductor processing equipment often uses plasma to process substrates. Usually, the reaction chamber in the equipment needs to be evacuated or the reaction gas is introduced under extremely low pressure, and then the substrate composed of semiconductor or other materials is processed. Semiconductor processing equipment includes chemical vapor deposition (CVD), etching, plasma-assisted chemical vapor deposition (PECVD), etc. Precise control of the reaction process needs to be ensured during these treatments, because the introduction of any uncontrollable factors will lead to defects, even major defects, in the processed substrates. Air leakage in the reaction chamber of semiconductor processing equipment is one of the situations that need to be strictly prev...

AI Technical Summary

Problems solved by technology

If the air leak detection is added as an additional step after the processing step, although the above problems can be avoided, the extra time will affect the throughput of the entire processing system

Moreover, air leakage detection needs to be carried out in real time, so if additional detection steps are used, it needs to be carried out frequently after the substrate processing is completed, so that the actual processing time of semiconductor processing equipment will be greatly reduced in order to detect air leakage , reducing the productivity

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