Exposure method adopting lithography machine

An exposure method and a lithography machine technology, which are applied in the field of lithography machine exposure, can solve the problems of production capacity decline, equipment utilization rate reduction, increase, etc., achieve good process registration accuracy, prevent silicon wafer deformation, and increase equipment utilization rate Effect

CN102411267AInactive Publication Date: 2012-04-11SHANGHAI HUALI MICROELECTRONICS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2012-04-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses an exposure method adopting a lithography machine. The method comprises the following steps executed in the continuous working process of the lithography machine: 101. ensuring silicon wafers to stand for a preset time on a silicon wafer carrying stage to ensure the temperature of the silicon wafers to be the same as the temperature of the silicon wafer carrying stage after the silicon wafers with a first temperature are transferred to the silicon wafer carrying stage with a second temperature; 102. opening vacuum equipment to ensure the silicon wafer carrying stage to attract the silicon wafers after silicon wafer deformation is completed; and 103. carrying out alignment and exposure operations. The method provided by the invention has the following beneficial effects that: the process alignment precision can be improved; high homogeneity between silicon wafers and between batches is realized in the continuous working process of the lithography machine; and the equipment utilization rate can be improved.
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Description

technical field

[0001] The invention relates to semiconductor technology, in particular to an exposure method for a photolithography machine. Background technique

[0002] At present, with the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional Integrated circuits; from the initial integrated circuit (Integrated Circuit, referred to as IC) to large scale integrated circuit (Large Scale Integration, referred to as LSI), very large scale integrated circuit (Very Large Scale Integration, referred to as VLSI), until today's ultra-large scale Integrated circuit (Ultra Large Scale Integration, referred to as ULSI), the area of ​​the device is further reduced, and the function is more comprehensi...

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Embodiment Construction

[0024] Embodiments of the present invention will be described in detail below. It should be noted that the embodiments described here are for illustration only, and are not intended to limit the present invention.

[0025] figure 1 An exemplary flow chart showing the exposure method of the lithography machine of the present invention includes the following steps 101-103 performed during the continuous operation of the lithography machine:

[0026] Step 101, after the silicon wafer with the first temperature is transferred to the silicon wafer loading table with the second temperature, the silicon wafer is placed on the silicon wafer loading table for a preset time, so that the silicon wafer and the silicon wafer loading table The temperature of the table is the same. The process of placing the silicon wafer on the silicon wafer stage for a preset time is equivalent to a process of temperature equilibrium, and the deformation of the silicon wafer is released during this proc...