Manufacturing method for light-emitting diode (LED) chipset capable of being directly connected to alternating current
A technology of LED chips and manufacturing methods, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as direct use, inability of LED chipsets, increase of lamp production cost and complexity of circuit connections, etc., to reduce production costs and circuit connections. The effect of connection complexity
Inactive Publication Date: 2012-11-28
NANTONG CHENGSHENG ELECTRONICS IND CO LTD +1
View PDF2 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The present invention designs a manufacturing method of LED chipset that can be directly connected to alternating current, and the technical problems it solves are (1) the existing LED chipset cannot be directly used with alternating current; (2) the existing light-emitting diode chip needs to be connected with The use of a special rectifier circuit and an external resistor will increase the production cost of the lamp and the complexity of the circuit connection
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0072] Combine below Figure 1 to Figure 23 , the present invention is further described:
[0073] Such as figure 1 As shown, a light-emitting diode chip with integrated resistors, the light-emitting diode chip from bottom to top is substrate 1, buffer layer 2, N-type layer 3, N-type confinement layer 4, active region layer 5, and P-type confinement layer respectively. Layer 6, P-type layer 7 and P-type ohmic contact layer 8. The substrate 1 is a carrier, generally made of materials such as sapphire, silicon carbide or GaN. Buffer layer 2 is a transitional layer on which high-quality N, P, quantum wells and other materials are grown. LED is composed of pn structure, buffer layer 2, N-type layer 3 layers, N-type confinement layer 4, P-type confinement layer 6 and P-type layer 7 are to form P and N-type materials required for making LED. The active region layer 5 is the light-emitting region of the LED, and the color of the light is determined by the structure of the active...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a manufacturing method for a light-emitting diode (LED) chipset capable of being directly connected to alternating current. The manufacturing method comprises the following steps of: connecting two generated integrated resistor light-emitting diode chips in parallel to positive and negative electrodes of the alternating current, directly connecting a connection end of a first semiconductor resistor of one integrated resistor light-emitting diode chip and a second semiconductor resistor of the other integrated resistor light-emitting diode chip and the positive electrode or the negative electrode of the alternating current, and allowing two integrated resistor light-emitting diode chips to emit light under the action of the alternating current according o the forward conduction principle of the diode. By the method, the light-emitting diode chips can be made into a plurality of light-emitting diodes and semiconductor resistors, so the light-emitting diode chipsare not needed to be matched with a special rectification circuit and an externally added resistor for use and production cost of lamps and lanterns and circuit connection complexity are greatly reduced.
Description
technical field [0001] The invention relates to a method for manufacturing a light-emitting diode chip, in particular to a method for manufacturing an LED chip group that can be directly connected to an alternating current. Background technique [0002] The light-emitting diode chip is the core component of the LED lamp, which refers to the P-N junction. Its main function is to convert electrical energy into light energy, and the main material of the chip is monocrystalline silicon. Semiconductor wafer is made up of two parts, and a part is P-type semiconductor, and hole occupies an leading position in it, and the other end is N-type semiconductor, and here mainly is electron. But time these two kinds of semiconductors couple together, between them, just form a P-N junction. When electric current acts on this chip by wire time, electron will be pushed to P district, and in P district, electron is with hole recombination, then will send energy with the form of photon, the p...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 俞国宏
Owner NANTONG CHENGSHENG ELECTRONICS IND CO LTD