Method used for forming MIM (metal-insulator-metal) capacitor structure and MIM capacitor

Abstract

The invention relates to a method used for forming an MIM (metal-insulator-metal) capacitor structure and an MIM capacitor. The method is characterized in that a second metal interlayer insulating layer and a third metal interlayer insulating layer are covered on a first metal interlayer insulating layer, wherein the top of the first metal interlayer insulating layer is provided with a groove in which a metal layer is deposited; multiple through holes are arranged in the second metal interlayer insulating layer, and a lower electrode metal layer, an insulating layer and an upper electrode metal are successively deposited on the through holes; the metal layer is electrically contacted with the lower electrode metal layer deposited in part of the through holes, and electrically connected with the upper electrode metal in all the through holes; the metal filled in a first through hole which is arranged in the third metal interlayer insulating layer is used for electrically educing the upper electrode metal to be outside the third metal interlayer insulating layer so as to serve as a capacitor terminal; and the second metal interlayer insulating layer and the metal filled in a second through hole which is arranged in the second metal interlayer insulating layer are used for electrically educing the metal layer to be outside the third metal interlayer insulating layer so as to serve as the other capacitor terminal.

Description

technical field [0001] The invention relates to an integrated circuit and a semiconductor device, in particular to a method for forming a MIN capacitor structure in an integrated circuit manufacturing process and a capacitor with the MIN structure. Background technique [0002] Metal-Insulator-Metal (MIM for short) capacitors are the most commonly used of the four capacitor structures in MMIC (Monolithic Microwave Integrated Circuit, monolithic microwave integrated circuit) chips. A conventional MIM capacitor consists of a lower metal plate, an upper metal plate and a MIM capacitor dielectric between them, and the upper and lower metal plates serve as electrodes of the MIM capacitor. MIM capacitors are fabricated on the semiconductor chip through the back-end process (Back End Of Line, referred to as BEOL). [0003] Chinese patent CN101996864A discloses a method for constructing a MIM capacitor in a semiconductor chip and the MIM capacitor in the semiconductor chip. A meth...

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Problems solved by technology

[0005] The invention provides a method for forming a MIM capacitor structure and a MIM capacitor manufactured by the method. The prepared MIM capacitor has high capacitance density, which solves the problem of low capacitance density of conventional capacitors

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