Copper Damascus process MIM (metal-insulator-metal) capacitor structure and manufacturing process

A technology of metal capacitors and insulating layers, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problem of reducing the area of ​​MIM capacitors and achieve the effect of increasing density

Active Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] And as the semiconductor size dec...

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  • Copper Damascus process MIM (metal-insulator-metal) capacitor structure and manufacturing process
  • Copper Damascus process MIM (metal-insulator-metal) capacitor structure and manufacturing process
  • Copper Damascus process MIM (metal-insulator-metal) capacitor structure and manufacturing process

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Embodiment Construction

[0051] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0052] A copper damascene process metal-insulation layer-metal capacitor manufacturing method, wherein,

[0053] figure 1 It is a structural schematic diagram of the structure of the copper damascene process metal-insulating layer-metal capacitor and its manufacturing process after forming the first electrode and the metal interconnection line of the present invention, please refer to figure 1 , the first electrode trench 3011 and the metal interconnection trench 4011 are formed by photolithography and etching on the base dielectric layer 101 by the damascene process, the metal barrier layer 801 and the copper seed layer are deposited, and the filling metal copper is electroplated, chemical mechanical Grinding and planarizing to remove excess metal, making the first electrode 301 and the metal interconnection 401;

[0054] figure 2 It is the s...

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Abstract

The invention relates to a copper Damascus process MIM (metal-insulator-metal) capacitor structure and a manufacturing process thereof. The structure is characterized that through adding two maskplates, a single Damascus process is used so as to manufacture an MIM capacitor and an inductor simultaneously. According to the technical scheme of the invention, the manufactured MIM double-layer capacitor structure can be completely compatible with a CMOS (complementary metal-oxide-semiconductor transistor) logic circuit and an inductive copper Damascus process, and the density of the MIN capacitor is increased.

Description

technical field [0001] The invention relates to a copper damascene process, in particular to a copper damascene process metal-insulator-metal (Metal-Insulator-Metal, MIM for short) capacitor structure and manufacturing method. Background technique [0002] With the reduction of the feature size of semiconductor devices, the semiconductor back-end copper process replaces the aluminum process and becomes the mainstream process. In mixed-signal and RF circuits, it is necessary to develop MIM capacitor structures and manufacturing processes that are fully compatible with CMOS logic circuits and copper damascene processes for inductors. This not only improves the complexity of the process; but also uses low-resistance copper as the electrode plate to improve the performance of the MIM capacitor. [0003] Patent US6329234, the copper process is compatible with the structure and process flow of CMOS metal insulating layer metal capacitors, and the technical solution adopted is...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/768H01L29/92
Inventor 李磊胡友存陈玉文姬峰张亮
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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