Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of MIM (Metal-Insulator-Metal) capacitor

A manufacturing method and metal layer technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of high resistance value of TaN and affecting the capacitance quality factor, etc.

Active Publication Date: 2013-12-04
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of affecting the quality factor of the capacitor due to the use of TaN to make the capacitor, and to avoid the defect that the TaN resistance value is too high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of MIM (Metal-Insulator-Metal) capacitor
  • Manufacturing method of MIM (Metal-Insulator-Metal) capacitor
  • Manufacturing method of MIM (Metal-Insulator-Metal) capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The specific embodiments described here are only used to explain the present invention, and are not used to limit the protection scope of the present invention.

[0036] The capacitor of the present invention is made on a semiconductor substrate, preferably, a silicon wafer is used as the silicon substrate, combined with figure 2 A flowchart of a method for manufacturing a MIM (metal-insulator-metal) capacitor, and Figure 3 to Figure 14 According to the present invention, a schematic structural diagram of a manufacturing process of a MIM (metal-insulator-metal) capacitor is shown to illustrate the method of the present invention in detail.

[0037] Since the etching process involved in the method of the present invention is the prior art, which includes the steps of applying photoresist, photolithography, etching, and stripping, thes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a manufacturing method of an MIM (Metal-Insulator-Metal) capacitor. According to the manufacturing method, an MIM metal plate is manufactured by using copper metal so as to reduce the resistance for realizing the improvement on a quality factor of the capacitor; meanwhile, the MIM capacitor is ensured to have a very small size, so that the problem that the quality factor of the capacitor is influenced because the capacitor is manufactured by adopting TaN in the prior art is solved and the defect of over-high TaN resistance is avoided. According to the method disclosed by the invention, a high-quality capacitor meeting the small-size requirement can be manufactured.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for manufacturing an MIM (metal-insulator-metal) capacitor. Background technique [0002] With the continuous improvement of semiconductor integrated circuit manufacturing technology, the continuous improvement of performance is also accompanied by the process of miniaturization and miniaturization of devices. More and more advanced manufacturing processes require as many devices as possible to be implemented in as small an area as possible to obtain as high performance as possible. [0003] Capacitors are important components in integrated circuits and are widely used in memory, microwave, radio frequency, smart card, high voltage and filter chips. With the reduction of chip size and the demand for large capacitors for performance, how to obtain high-density capacitors in a limited area has become a very attractive topic. [0004] The most...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/28
Inventor 胡友存张亮姬峰李磊陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP