Photoresistance removing method

Abstract

A photoresistance removing method is applied to a MIM (Metal-Insulator-Metal) capacitor manufacturing technique. The photoresistance removing method comprises the following steps of: forming a photoresistance layer on the surface of a wafer, and carrying out exposure and development on the wafer coated with the photoresistance layer; when the photoresistance layer is needed to be removed, carrying out wet process etching on the photoresistance layer by adopting at least one organic solvent so as to remove the photoresistance layer on the surface of the wafer. According to the photoresistance removing method of the invention, a step of removing photoresistance by adopting dry etching in the traditional process is changed, oxide which is difficult to etch is prevented from forming on the surface of products, and in addition, the photoresistance can be more effectively removed, thereby the yield of the products is increased.

Description

technical field [0001] The invention relates to a capacitor manufacturing process, and in particular to a photoresist removal method in the capacitor manufacturing process. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency and monolithic microwave ICs. Common capacitor structures include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and metal-insulator-metal (MIM) capacitors. Among them, since MOS capacitors and PN junction capacitors are limited by their own structures, they are prone to generate hole layers during operation, resulting in lower frequency characteristics, while MIM capacitors can provide better frequency and temperature characteristics, so MIM capacitors can In some special applications, it provides better electrical characteristics due to MOS capacitance and PN junction capacitance. In addition, the MIM capacitor can be formed in the metal i...

AI Technical Summary

Problems solved by technology

However, the inventors have found in long-term production practice that when dry etching is used to remove the photoresist layer, since the oxygen in dry etching easily reacts with the metal on the surface, such as TiN, it is difficult to form on the surface of the MIM capacitor. The etched oxide affects the subsequent process; moreover, the general dry etching usually cannot remove the photoresist layer on the surface, resulting in a decline in product yield

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