Preparation method for top-gate self-aligned zinc oxide thin film transistor

Abstract

The invention discloses a preparation method for a top-gate self-aligned zinc oxide thin film transistor. According to the preparation method, only three masks are needed, and a zinc oxide thin film transistor is prepared through three times of photoetching; two layers of photoresist of a gate dielectric layer and a gate electrode outside a channel region are stripped together by adopting a self alignment process; and exposed semiconductor layers at two ends of the channel region are treated to reduce the resistance of the exposed semiconductor layers so as to form a low-resistance source region and a low-resistance drain region. Due to the implementation of self alignment of the gate dielectric layer and the gate electrode, parasitic capacitance and parasitic resistance are effectively reduced, and the grid-control capacity is improved; and therefore the preparation method has positive effects of improving the performance of a thin film transistor device, realizing a high-speed thin film transistor circuit and the like. Simultaneously, the process difficulty is greatly reduced, the manufacturing cost is saved, and the rate of finished products is improved.

Description

technical field [0001] The invention belongs to the fields of semiconductor industry and flat panel display, and in particular relates to a method for preparing a top gate self-aligned zinc oxide thin film transistor. Background technique [0002] Organic Light-Emitting Diode OLED (Organic Light-Emitting Diode) has self-illumination at the same time, no backlight is required, high contrast, thin thickness, wide viewing angle, fast response speed, can be used for flexible panels, wide operating temperature range, structure and process Simpler and other excellent features are considered to be the new application technology of the next generation of flat panel displays. However, it is impossible to meet these requirements if traditional amorphous silicon or polysilicon thin-film transistors or organic thin-film transistors are still used to drive OLEDs. For OLED display technology, many new technical requirements are put forward for thin film transistors: first, OLED devices r...

AI Technical Summary

Problems solved by technology

At the SID International Summit in 2011, Sony showed an OLED screen driven by oxide thin film transistors, its display quality has been significantly improved, and the problem of uneven brightness of OLED display has been solved.

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