Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multi-layer conductive transparent film and method for increasing light emitting efficiency of light emitting device

A technology of conductive transparent film and light extraction efficiency, applied in semiconductor devices, circuits, electrical components, etc., can solve problems such as affecting applications, poor P-type GaN ohmic contact, etc., to increase device size, reduce optical power loss, and improve light output. The effect of efficiency

Inactive Publication Date: 2012-05-30
HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD +1
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ohmic contact between P-type ZnO and P-type GaN is not good, which affects its application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-layer conductive transparent film and method for increasing light emitting efficiency of light emitting device
  • Multi-layer conductive transparent film and method for increasing light emitting efficiency of light emitting device
  • Multi-layer conductive transparent film and method for increasing light emitting efficiency of light emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] refer to figure 2 As shown, the multilayer conductive transparent film used to improve the light-emitting efficiency of the light-emitting device of the present invention also includes a high-refractive-index transparent electrode layer 12 grown on the P-type GaN surface epitaxial wafer 10, and then on the high-refractive-index transparent electrode layer 12 The outer surface of the ITO transparent electrode layer 11 is covered.

[0031] The main inventive point of the present invention is that a transparent electrode layer 12 with a high refractive index n>2.0 is sandwiched and grown between the P-type GaN surface epitaxial wafer 10 and the ITO transparent electrode layer 11 of the traditional GaN-based optoelectronic device. This transparent electrode layer 12 can select P-type ZnO electrode layer thin film for use (as: ZrO2-Y2O3, In2O3-Sb2O3, AlSb, GaSb, InGaSb, InSb, AlAs, InSb, AgBr, TlBr, AgCl, TlCl, CoSi2, TiSi etc.), The thickness of the P-type ZnO electrode l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a multi-layer conductive transparent film and a method for increasing the light emitting efficiency of light emitting devices. The method comprises the steps of: growing a transparent electrode layer with a high refraction coefficient and an indium tin oxide (ITO) transparent electrode layer from inside to outside in sequence on an epitaxial wafer on a P-type gallium nitride (GaN) surface, wherein the refraction coefficient n of the transparent electrode layer is more than 2.0; and growing the transparent electrode layer by chemical vapor deposition or physical vapor deposition, making each of monomer electrodes into a microsphere or cone shape, and forming all transparent electrodes with high refraction coefficients into periodically arranged arrays by a photolithography-etching method, a selective growth method, a sol-gel method or a self-assembly method. Therefore, the light emitting efficiency of photoelectric devices is increased without the reduction of the electric properties of the photoelectric devices.

Description

technical field [0001] The invention relates to the technical field of manufacturing electronic components, in particular to a multilayer conductive transparent film capable of improving the light-emitting efficiency of a light-emitting device and a method thereof. Background technique [0002] Although GaN-based optoelectronic devices (LED light-emitting devices) have made considerable progress in recent years, it is difficult to achieve low-resistance P-type GaN ohmic contacts. There are two reasons for hindering low-resistance P-GaN ohmic contacts: on the one hand, it is difficult to grow heavily doped P-GaN materials (P-type concentration > 10 18 cm -3 ); on the other hand, there is a lack of suitable contact metal materials, the work function of P-GaN material is very large (7.5eV), and the metal Pt with the largest work function is only 5.6eV. In addition, the conditions of the metallization process (including surface treatment, metal deposition and alloying treat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/42H01L33/00
Inventor 孙智江刘经国
Owner HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com