Alkaline corrosive agent for representing defects in GaN (Gallium Nitride) epitaxial layer and preparation method thereof

Abstract

The invention discloses an alkaline corrosive agent for representing defects in a GaN (Gallium Nitride) epitaxial layer and a preparation method thereof. The alkaline corrosive agent is characterized by being prepared through uniformly mixing two types of strong bases, namely KOH and NaOH at the mass ratio of (1-2):(2-1), and being used for wet-method chemical corrosion of a GaN material. The preparation method comprises the following steps of: firstly, respectively placing two types of granular strong bases, namely KOH and NaOH on weighing paper and respectively weighing the two types of strong bases according to the mass ratio; and then putting the two types of strong bases, which are weighed according to the mass ratio, into a nickel crucible and uniformly mixing to obtain the alkaline corrosive agent.

Description

technical field [0001] The invention relates to chemical etching technology, in particular to an alkaline etchant for characterizing defects in GaN epitaxial layers and a preparation method. Background technique [0002] In recent years, Group III nitride semiconductor materials represented by GaN are very suitable for the production of high-power, radiation-resistant, high-frequency and high-density integrated electronic devices, as well as blue and green light due to their chemical properties of high temperature resistance and corrosion resistance. And ultraviolet optoelectronic devices have become a research hotspot worldwide. However, it is difficult to prepare GaN bulk single crystals, and it is difficult to obtain GaN bulk single crystals with good quality and large size as substrates, so the epitaxial growth of GaN is usually carried out in the form of heteroepitaxial growth. Due to the lattice mismatch and thermal mismatch between the substrate material and the GaN ...

AI Technical Summary

Problems solved by technology

However, the preparation of GaN bulk single crystal is difficult, and it is difficult to obtain GaN bulk single crystal material with good quality and large size as a substrate, so the epitaxial growth of GaN is usually carried out in the form of hetero-epitaxy

Due to the lattice mismatch and thermal mismatch between the substrate material and the GaN epitaxial layer, many hexagonal grains are formed during the growth process, and these individual grains are tilted and rotated in the GaN epitaxial layer, resulting in a high density of defects

Images