Polishing solution capable of improving surface quality of polished phase transition material

A polishing liquid and polishing particle technology, applied in polishing compositions containing abrasives, materials for heat exchange, chemical instruments and methods, etc., can solve the problems of difficult to solve micro-defects, scratches, interface damage, etc. quality effect

Active Publication Date: 2012-06-27
SHANGHAI XINANNA ELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Because phase change materials are usually Ge, Sb, and Te multi-alloys, it is easier to achieve the requirements of removal rate and polishing selectivity by selecting appropriate oxidants, chelating agents, and inhibitors; There are differences in activity, and micro-defects such as scratches, residues, and interface damage are often caused after polishing
Microdefects are often difficult to resolve when using conventional polishing fluids

Method used

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  • Polishing solution capable of improving surface quality of polished phase transition material
  • Polishing solution capable of improving surface quality of polished phase transition material
  • Polishing solution capable of improving surface quality of polished phase transition material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The polishing solution consists of: 5wt% 100nm colloidal nano-silica, 5wt% potassium permanganate, 2wt% polyoxyethylene lauryl ether (Brij35), adjust its pH value to 3 with pH regulator nitric acid, and the balance is deionized water .

[0051] GST surface condition after polishing see figure 2 shown.

Embodiment 2

[0053] The polishing liquid is composed of: 3wt% 30nm colloidal nano silicon dioxide, 2wt% hydrogen peroxide, 1000ppm glycine, the pH value is adjusted to 3 with pH regulator sulfuric acid, and the balance is deionized water.

[0054] GST surface condition after polishing see image 3 shown.

[0055] From figure 1 It can be seen that after polishing GST with conventional polishing liquid, although a smooth and defect-free surface can be obtained macroscopically, it can still be clearly seen after SEM magnification that there are many granular oxides on the surface of GST, which are uneven. Locally there are corrosion pits left by chemical attack.

[0056] figure 2 SEM photos of the phase change material GST after polishing using the polishing solution of Example 1 are given. From figure 2 It can be seen that the addition of surface modifier Brij 35 in the polishing liquid effectively inhibits the formation of granular oxides on the surface of GST. However, the improvem...

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Abstract

The invention provides a chemically mechanical polishing solution for a phase transition memory. The polishing solution comprises, calculated by a total weight of the polishing solution, 0.1-30 wt% of polishing particle, 0.01-10 wt% of oxidizing agent, 0.001-5 wt% of surface improving agent and aqueous medium. Using the polishing solution provided by the invention to carry out polishing treatment on a phase transition memory member can obviously improve surface quality of the polished phase transition material and realize control on low surface roughness less than 1 nm and micro defects (corrosion pit, residual, scratch and polishing mist, etc.).

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid which can improve the surface quality of a phase change material after polishing. Background technique [0002] With the launch of Samsung's 512M phase-change memory products in 2009, phase-change memory has the advantages of high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance. It is considered to be the most competitive next-generation non-volatile memory at present. [0003] In the process of constructing phase-change memory cells, chemical-mechanical polishing (CMP) process is a key step in order to confine phase-change materials in nanopores to achieve high density and low power consumption. In this step, it is necessary to use CMP to remove the phase change material outside the nanopores, while reducing the loss of the underly...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K5/02
Inventor 王良咏刘卫丽宋志棠刘波钟旻
Owner SHANGHAI XINANNA ELECTRONICS TECH
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