Low-temperature sintering microwave dielectric ceramic material with high Q value and preparation method thereof

A technology of microwave dielectric ceramics and low-temperature sintering, applied in the field of material science, can solve the problems of deterioration of ceramic Q value, achieve high quality factor Qf value, low cost, and good reproducibility

Active Publication Date: 2012-07-04
JIAXING GLEAD ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the technical defect that the introduction of a large amount of sintering aids often causes the obvious deterioration of the ceramic Q value, an object of the present invention is to provide a high-Q low-temperature sintered microwave dielectric ceramic material, which can successfully reduce the sintering temperature of ceramics. to 900 o Below C, while maintaining excellent dielectric properties, especially high Q value

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Press Li 2 (Mg 0.7 Zn 0.3 ) Ti 3 o 8 Stoichiometric weighing of the main ingredient Li 2 CO 3 , MgO, ZnO and TiO 2 , add ethanol according to the weight ratio of mixture to absolute ethanol 1:1~1.5, use wet method to mix the mixture for 16-24h and then add it at 80 o C is dried, and the dried mixture is passed through a 40-mesh sieve, and put into an alumina crucible, at 750-900 o Calcining at C for 2-4 hours to synthesize the main crystal phase, which is ground and used as a ceramic base material for later use.

[0034] Will Li 2 CO 3 , B 2 o 3 , SiO 2 According to the following mole percentage ratio: Li 2 CO 3 30%, B 2 o 3 40%, SiO 2 30%, weighed and dried Li 2 CO 3 、H 3 BO 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 1h, then put the mixed powder into corundum crucible, o C / min heating rate to 1000 o C. After heat preservation and homogenization for 30 minutes, pour into water to quench. The resulting glass frit was ...

Embodiment 2

[0037] Press Li 2 (Mg 0.7 Zn 0.3 ) Ti 3 o 8 Stoichiometric weighing of the main ingredient Li 2 CO 3 , MgO, ZnO and TiO 2 , add ethanol according to the weight ratio of mixture to absolute ethanol 1:1~1.5, use wet method to mix the mixture for 16-24h and then add it at 80 o C is dried, and the dried mixture is passed through a 40-mesh sieve, and put into an alumina crucible, at 750-900 o Calcining at C for 2-4 hours to synthesize the main crystal phase, which is ground and used as a ceramic base material for later use.

[0038] ZnO, B 2 o 3 , SiO 2 According to the following mole percentage ratio: ZnO 60%, B 2 o 3 30%, SiO 2 10%, weigh the dried ZnO, H 3 BO 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 1h, then put the mixed powder into corundum crucible, o C / min heating rate to 1100 o C, after heat preservation and homogenization for 40min, pour into water to quench. The resulting glass frit was placed at 120 o C drying, still use Z...

Embodiment 3

[0041] Press Li 2 (Mg 0.7 Zn 0.3 ) Ti 3 o 8 Stoichiometric weighing of the main ingredient Li 2 CO 3 , MgO, ZnO and TiO 2 , add ethanol according to the weight ratio of mixture to absolute ethanol 1:1~1.5, use wet method to mix the mixture for 16-24h and then add it at 80 o C is dried, and the dried mixture is passed through a 40-mesh sieve, and put into an alumina crucible, at 750-900 o Calcining at C for 2-4 hours to synthesize the main crystal phase, which is ground and used as a ceramic base material for later use.

[0042] ZnO, B 2 o 3 , SiO 2 Mole percentage ratio: ZnO 60%, B 2 o 3 30%, SiO 2 10%, weigh the dried ZnO, H 3 BO 3 and SiO 2 , choose ZrO 2 Grinding balls, mixed by dry method for 1h, then put the mixed powder into corundum crucible, o C / min heating rate to 1100 o C, after heat preservation and homogenization for 40min, pour into water to quench. The resulting glass frit was placed at 120 o C drying, still use ZrO 2 Grinding balls, using d...

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Abstract

The invention belongs to the technical field of the material science, in particular to a low-temperature sintering microwave dielectric ceramic material with a high Q value and a preparation method thereof. The low-temperature sintering microwave dielectric ceramic material with a high Q value has the raw material formula composition of Li2(Mg1-xZnx)Ti3O8 and a sintering assistant, wherein x is more than or equal to 0 and less than or equal to 1; and the sintering assistant accounts for 0.5-5wt% of Li2(Mg1-xZnx)Ti3O8 and is one or more of Li2O-B2O3-SiO2 glass powder, ZnO-B2O3-SiO2 glass powder, BaO-O-B2O3-SiO2 glass powder and CuO-Bi2O3-V2O5 sintering powder. The low-temperature sintering microwave dielectric ceramic material provided by the invention has the advantages of low cost, smalladded sintering dose, high quality factor Qf value, simple preparation technology, good reproducibility and great industrial application value.

Description

technical field [0001] The invention belongs to the technical field of material science, and in particular relates to a high-Q low-temperature sintered microwave dielectric ceramic material and a preparation method thereof. Background technique [0002] Chip electronic components manufactured by Low Temperature Co-firing Ceramic (LTCC) technology have the characteristics of miniaturization, high integration, high frequency performance and reliability. In the past thirty years, with the rapid development of modern wireless communication and mobile communication, LTCC technology has made great progress. LTCC technology requires microwave dielectric ceramics and metals Ag and Cu with high conductivity and low melting point as internal electrodes. Therefore, microwave dielectric ceramic materials that can be sintered at low temperature have become a research hotspot, and Al 2 o 3 、(Mg,Ca)TiO 3 , ZnO-TiO 2 、Ba 2 Ti 9 o 20 , Li 2 O-Nb 2 o 5 -TiO 2 Low temperature sinter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/622
Inventor 童建喜张斌黄伟杨辉余祖高
Owner JIAXING GLEAD ELECTRONICS CO LTD
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