Production method of nitrogen-free dielectric antireflective film

Abstract

The invention discloses a production method of a nitrogen-free dielectric antireflective film. The method comprises the following steps of: introducing a reactant gas into an exhaust pipe until the reaction is steady, introducing the reactant gas into a reaction chamber, and then starting the plasma; or, firstly starting the plasma, and then, introducing the reactant gas into the reaction chamber; finishing deposition of the nitrogen-free dielectric antireflective film by making use of the time delay between introducing the reactant gas and starting the plasma; and finally, closing the reactant gas, and then, closing the plasma. The production method of the invention can effectively control the reflectivity and the extinction coefficient of the nitrogen-free dielectric antireflective film, get a straighter light resistance shape and greatly eliminating the light resistance standing wave effect and the light resistance poisoning effect.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a nitrogen-free dielectric antireflection film. Background technique [0002] In the prior art, the manufacturing method of the nitrogen-free dielectric anti-reflection film adopts the simultaneous opening of the plasma and the passage of the reaction gas. Such as figure 1 Shown, the manufacture method of the nitrogen-free dielectric anti-reflection film (Nitrogen free DARL) of prior art comprises the steps: first, provide reaction gas; Then, reaction gas is passed into exhaust pipe until stable; Then, react The gas is passed into the reaction chamber, and the plasma is turned on at the same time. In this step, there is no time delay between passing the reaction gas and turning on the plasma, so as to complete the deposition of the nitrogen-free dielectric antireflection film; finally, the reaction gas is turned off first, Then turn off the ...

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Problems solved by technology

[0003] The deposition thickness of the nitrogen-free dielectric antireflection film is generally about several hundred angstroms (for example, 200-500 angstroms), and the whole deposition process is usually only a short ten seconds. If there is no time delay between the reactive gas and the plasma on, it is difficult to control the reflectance (RI) and extinction coefficient (K) of the resulting nitrogen-free dielectric antireflective film, which can lead to poor shape of the photoresist and cannot Effectively eliminate photoresist standing wave effect and photoresist poisoning effect

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