Copper-indium-gallium alloy and preparation method thereof
A copper indium gallium alloy and alloy technology, applied in the field of copper indium gallium alloy and its preparation, can solve problems such as inability to obtain constant layer composition results, and achieve uniform composition and structure, simple preparation method, and high purity
Inactive Publication Date: 2013-04-17
苏州晶纯新材料有限公司
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
So far, deposition of CuInGa layers has been achieved by co-evaporating the evaporation sources of the elements (independent Cu, In, Ga) or by vapor deposition of alternating layers of binary master alloys from the Cu-In-Ga system, but these methods , almost no constant result of the layer composition can be obtained over a longer period of time, and it is not possible to deposit all three elements by sputtering, so several steps are often required to deposit CuInGa layers
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0019] The present invention will be described in further detail below in conjunction with specific examples, but the present invention is not limited to the following examples.
[0020] A method for preparing a copper indium gallium alloy, using copper with a purity greater than 99.99%, indium with a purity greater than 99.99%, and gallium with a purity greater than 99.99% as raw materials, comprising the following steps:
[0021] (1) Take a tungsten crucible with a purity greater than 99.99%, and place it at 1600°C for about 8 hours to remove moisture and volatile gases or substances in the crucible; then cool down to about 100°C, and clean the oxides on the inner wall of the crucible, First wipe the inner surface of the crucible with asbestos cloth, and then use a vacuum cleaner to suck up the powder;
[0022] (2), put the copper sheet into the tungsten crucible processed in step (1), put the indium and gallium into the material container, and the weight ratio of the copper...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a copper-indium-gallium alloy and a preparation method thereof. The alloy consists of the following components in percentage by weight: 51 percent of Cu, 39 percent of In and 10 percent of Ga; and the core phases of the alloy are Cu3Ga and Cu11In9. According to the method, the copper-indium-gallium alloy is prepared from high-purity copper, indium and gallium serving as raw materials by a high vacuum melting method. The copper-indium-gallium alloy has high purity, can be used as a sputtering target or an evaporation material, and can be obtained by a simple and convenient method, a formula is reasonable and novel, a CuInGa layer is formed through one-step coating, and a CIGS film is generated by a selenizing or vulcanizing method. The preparation method for the copper-indium-gallium alloy is simple, and the components and structure of the obtained copper-indium-gallium alloy are uniform.
Description
technical field [0001] The invention relates to a copper indium gallium alloy used for manufacturing sputtering targets and evaporation materials and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible and inexhaustible renewable energy source for human beings. It does not produce any environmental pollution and is a clean energy source. A solar cell converts the light energy irradiated by the sun into electrical energy. With its unique advantages, solar cells surpass wind energy, water energy, geothermal energy, nuclear energy and other resources, and are expected to become the main pillar of future power supply. It is estimated that if 0.1% of the solar energy on the earth's surface is converted into electrical energy, the conversion efficiency is only 5%, and the annual additional electricity generated is 40 times the current global energy consumption. The conversion of solar radiation into electrical energy is the fastest growin...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00C22C1/02
Inventor 钟小亮王广欣王树森
Owner 苏州晶纯新材料有限公司