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Digital-domain accumulation complementary metal oxide semiconductor-time delay integration (CMOS-TDI) image sensor

An image sensor, digital domain technology, applied in image communication, TV, color TV components and other directions, can solve problems such as limiting the development of CMOS-TDI image sensors

Inactive Publication Date: 2013-05-22
TIANJIN UNIV
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  • Abstract
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Problems solved by technology

At present, there is no suitable method in the existing technology to realize the CMOS-TDI image sensor with digital domain accumulation, which limits the development of CMOS-TDI image sensor

Method used

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  • Digital-domain accumulation complementary metal oxide semiconductor-time delay integration (CMOS-TDI) image sensor
  • Digital-domain accumulation complementary metal oxide semiconductor-time delay integration (CMOS-TDI) image sensor
  • Digital-domain accumulation complementary metal oxide semiconductor-time delay integration (CMOS-TDI) image sensor

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Embodiment Construction

[0020] For a pixel array with n rows and m columns, an n-level CMOS-TDI image sensor can be realized, and the sensor architecture reference image 3 . The CMOS-TDI image sensor adopts a column-level architecture, that is, an independent ADC is placed in each column. The CMOS-TDI image sensor mainly includes: a pixel array of n rows×m columns, a column-parallel signal front-end processing circuit (CDS&signal amplification), a column-parallel ADC, a column-parallel digital domain accumulator, a column-parallel divider, and a timing control circuit and output shift register. The analog signal output by each column of pixels is quantized by the column-parallel ADC after being amplified and adjusted by column-parallel CDS, and the quantized digital signal enters the column-parallel digital domain accumulator to complete the accumulation of the same exposure results. After n times of accumulation The signal restores the data bit width through the column-parallel divider, and final...

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Abstract

The invention relates to the field of digital-analogue hybrid integrated circuit design, discloses a digital-domain accumulation complementary metal oxide semiconductor-time delay integration (CMOS-TDI) image sensor, and aims to reduce the chip area and power consumption of a CMOS-TDI image sensor to realize high horizontal frequency and reduce reading-out noise to realize high TDI level. In order to fulfill the aims, the technical scheme is that: the digital-domain accumulation CMOS-TDI image sensor comprises a pixel array with n rows and m columns, column parallel signal front-end processing circuits which are correlated double sampling (CDS) circuits, a signal amplification circuit, column parallel analogue-to-digital converters (ADC), column parallel digital domain accumulators, column parallel dividers, a time sequence control circuit and an output shift register. A column-level architecture is adopted, namely independent ADCs are arranged in each column. The image sensor is mainly applied to the design and manufacture of semiconductor image sensors.

Description

technical field [0001] The invention relates to the field of digital-analog hybrid integrated circuit design, in particular to a digital domain accumulation CMOS-TDI image sensor. Background technique [0002] The image sensor can convert the optical signal obtained by the lens into an electrical signal that is easy to store, transmit and process. Image sensors can be divided into area array type and line array type according to the working method. The working principle of the area array image sensor is to shoot an object with a pixel array arranged in a two-dimensional array to obtain two-dimensional image information, while the working principle of the line array image sensor is to use a pixel array arranged in a one-dimensional line array Obtain two-dimensional image information by scanning and shooting the object, and the working method of the line array image sensor refers to figure 1 . Linear image sensors are widely used in many fields such as aerial photography, s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/3745H04N5/357
Inventor 高静聂凯明徐江涛姚素英史再峰袁高斌李渊清
Owner TIANJIN UNIV
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