Method for manufacturing high-frequency high-voltage diode by use of czochralski silicon wafer
A Czochralski silicon wafer, high frequency and high voltage technology, applied in the manufacture of semiconductor/solid state devices, electrical components, circuits, etc., can solve the problems of limited production of silicon wafers in melting, inability to meet market demands, high production costs and high energy consumption , to achieve the effect of solving the shortage of supply
Inactive Publication Date: 2012-08-15
NANTONG GAOXIN ELECTRONICS
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Problems solved by technology
[0011] 2) High production cost and energy consumption
[0012] 3) The output of silicon wafers in zone melting is limited by neutron irradiation resources and safety control, which cannot meet market demand
Method used
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[0020] The method for manufacturing high-frequency and high-voltage diodes by using the Czochralski silicon chip of the present invention mainly manufactures high-frequency and high-voltage diodes by Czochralski CZ silicon chips.
[0021] The whole manufacturing method of the high-frequency high-voltage diode of the present invention is the same as the conventional manufacturing method, so it will not be repeated here. The main improved process is the diffusion process, which is compared with the diffusion process of high-frequency and high-voltage diodes manufactured by photo-phase in zone melting. Except for the following improvements and innovations, other process flows are consistent with the high-frequency and high-voltage diode diffusion process of photo-based manufacturing in zone melting Consistent, is a conventional technology, so it is no longer repeated.
[0022] The following takes CZ silicon wafer as an example to illustrate its manufacturing process:
[0023] Su...
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Abstract
The invention discloses a method for manufacturing a high-frequency high-voltage diode by use of a czochralski silicon wafer. The method comprises the following steps of silicon wafer diffusion, lamination alloying, silicon lamination cutting, assembly sintering and passivation encapsulation under a certain limit of conditions, wherein the diffusion technology comprises six steps of total-number test, PN pre-treatment, silicon wafer source coating, PN diffusion, PN diffusion after-treatment and PT diffusion of the czochralski N-type silicon wafer. In the invention, by adopting a czochralski silicon wafer to manufacture a high-frequency high-voltage diode, the huge bottleneck restricting the development of the industry such as photo source lack, high cost and the like in the float zone can be fundamentally solved.
Description
technical field [0001] The invention relates to a manufacturing method of high-frequency and high-voltage diodes, in particular to a manufacturing method of high-frequency and high-voltage diodes comprising: silicon wafer diffusion, laminated alloys, silicon stack cutting, assembly and sintering, and passivation packaging. Background technique [0002] Brief introduction of silicon single crystal material and its original technical characteristics [0003] Silicon single crystal material is the main structural material for manufacturing high-frequency and high-voltage diodes, and it accounts for the highest proportion in the cost of device manufacturing materials. [0004] Silicon single crystal materials can be divided into several types according to their own manufacturing process, mainly including: [0005] According to the drawing process, it can be divided into two categories: straight drawing (CZ) and zone melting (FZ); [0006] According to the surface state or surf...
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IPC IPC(8): H01L21/329
Inventor 陈许平刘卉
Owner NANTONG GAOXIN ELECTRONICS