Rapid super junction vertical double-diffused metal-oxide semiconductor field-effect transistor

Abstract

The invention relates to a rapid super junction vertical double-diffused metal-oxide semiconductor field-effect transistor, which comprises an N-type doped silicon substrate which is also used as a drain region, an N-type doped silicon epitaxial layer and a super junction structure. The N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate. The super junction structure is arranged in an N-type silicon doped semiconductor region. The super junction structure consists of P-type pillars and N-type pillars which are arranged at intervals. A first P-type doped semiconductor region is formed on each P-type pillar and is arranged in the N-type doped silicon epitaxial layer. A second P-type highly-doped semiconductor contact region and an N-type highly-doped semiconductor source region are arranged in the first P-type doped semiconductor region. The rapid super junction vertical double-diffused metal-oxide semiconductor field-effect transistor is characterized in that a source buried layer is arranged on the surface of each N-type pillar, the source buried layer comprises a thin oxidation layer and polycrystalline silicon on the thin oxidation layer and a polycrystalline silicon gate is connected with source metal.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to fast switching silicon high-voltage power devices, and is particularly suitable for silicon superjunction vertical double diffused metal oxide field effect transistors (Superjunction VDMOS, namely super junction VDMOS, which is abbreviated as super junction VDMOS). VDMOS), more specifically, relates to a silicon superjunction VDMOS structure that can switch quickly and with ultra-low loss. Background technique [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speeds, smaller drive currents, and wider safe working areas. , So it has been favored by many researchers. Nowadays, power devices are developing in the direction of increasing working voltage, increasing working current, reducing on-resistance, acce...

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Problems solved by technology

[0005] However, in the traditional superjunction vertical double-diffused metal-oxide-semiconductor transistor, since the concentration of the drift region is much higher than that of the vertical double-diffused metal-oxide-semiconductor field-effect transistor, the gate parasitic capacitance is very high. During the switching process of the device, Affects switching speed and switching losses

[0006] In addition, in the traditional vertical double-diffused metal oxide semiconductor field effect transistor, due to the fast switching speed, the voltage at both ends of the drain source of the device changes rapidly, and the drain source capacitance generates a large drift current, which flows through the P-type doped region. The parasitic triode of the device is turned on and the device fails

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