Semiconductor structure with low resistance substrate and low power loss
A semiconductor and conductive structure technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of reduced product usable life, microscopic cracks, cost increase, etc., to achieve continuous production capacity, reduce Power loss, effect of reducing resistance
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[0038] Figure 3A A first embodiment of the low power loss semiconductor structure of the present invention is shown. Such as Figure 3A As shown, a semiconductor unit 300 has a substrate 301, and at least one hole 302 is formed in the substrate 301, wherein the hole 302 can be implemented in a through silicon via (TSV) manner. A conductive substance 303 is located in the hole 302 , and a conductive structure 304 is located on the surface of the substrate 301 and the conductive substance 303 . The conductive structure 304 serves as a drain electrode of the power semiconductor. A source electrode 308 and a gate electrode 309 are located on a surface 310 of the semiconductor unit 300 . The advantage of reducing the resistance of the semiconductor unit 300 can be achieved by using the conductive structure 304 in the hole 302 to partially or completely replace the substrate 301 with a relatively high resistance value.
[0039] Figure 3B to Figure 3C It is the manufacturing m...
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